2014
DOI: 10.1063/1.4901833
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The high temperature photoluminescence and optical absorption of undoped ZnO single crystals and thin films

Abstract: Blueshift of optical band gap in ZnO thin films grown by metal-organic chemical-vapor deposition

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Cited by 11 publications
(5 citation statements)
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“…6). This is in marked contrast with the power dependence of the luminescence from single crystal ZnO reported previously3941, and shown in Fig. 7, where both the broad band and band-edge luminescence increase with laser power but the UV luminescence increases at a higher rate.…”
Section: Discussioncontrasting
confidence: 79%
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“…6). This is in marked contrast with the power dependence of the luminescence from single crystal ZnO reported previously3941, and shown in Fig. 7, where both the broad band and band-edge luminescence increase with laser power but the UV luminescence increases at a higher rate.…”
Section: Discussioncontrasting
confidence: 79%
“…Therefore, the explanation for the observed enhancements must be associated with changes in the probability of creating excitons and their recombination lifetimes. In the case of pure ZnO, the enhancement of the UV luminescence with laser power39 is due to the increased number of excitons created as well as an increase in excitonic recombination efficiency in the electric field of the illuminating laser. In the presence of the Ag and Au nanoparticles, the local field is also greatly enhanced by the surface plasmon resonance.…”
Section: Discussionmentioning
confidence: 99%
“…A recent paper [21] with high temperature PL investigation also supports this contention. Also to note, PL intensity at 2.4 eV, which is supposed from oxygen vacancies [7,22] is correlated with higher PL intensity at ~ 3.10 eV in all the unirradiated and irradiated samples.…”
Section: Resultssupporting
confidence: 55%
“…Then the results of Gaussian deconvolution are shown by using the error lines in Figure and Figure S5b in the Supporting Information. In addition, the PL spectra originating from the defects in ZnO at the temperature of 200 °C do not shift clearly to the lower energy and are nearly parallel with those at room temperature . Consequently, it seems to be reasonable to interpret the gas response at 200 and 375 °C by using μPL spectra at room temperature.…”
Section: Resultsmentioning
confidence: 93%
“…In addition, the PL spectra originating from the defects in ZnO at the temperature of 200 °C do not shift clearly to the lower energy and are nearly parallel with those at room temperature. 66 Consequently, it seems to be reasonable to interpret the gas response at 200 and 375 °C by using μPL spectra at room temperature. From Figure 6 and Figure S5b, it is found that where the DL percentage is high and the AL percentage is low, the response to acetone is high for thicker ZnO NWs (D > 110 nm), implying that DL can positively improve the gas sensitivity whereas AL plays a negative role.…”
Section: ■ Results and Discussionmentioning
confidence: 99%