The highly electrical performances of flexible indium-zinc-oxide based thin-film transistors on stability improvement by passivation layer

Wang, Cheng Jyun; You, Hsin Chiang; Ko, Fu‐Hsiang

doi:10.1016/j.mee.2017.02.024

Cited by 4 publications

(2 citation statements)

References 27 publications

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“…The TFTs were indeed highly transparent (transmission of ~70% in the visible spectrum) and showed excellent electrical characteristics including an I ON /I OFF ratio of approximately 10 4 through the spray pyrolysis to deposit the active ZnO channel layer. These results represent significant achievements toward low cost and low energy consumption transparent oxide TFTs based on simple solution-based processes [24,37]. However, the spray-deposited film still exhibited high roughness of the micro-grade film as compared with the spin-coated film, and a high temperature manufacturing process >400 °C was involved.…”

Section: Resultsmentioning

confidence: 99%

“…In recent years, solution-based manufacturing technologies have been promising candidates for the manufacturing of next generation materials for sensing electronic devices due to their potential benefits including reduced production costs, large area fabrication, low temperature processing, and suitability for various substrates e.g., flexible and glass substrates [20,21,22,23,24,25]. Generally, the spin-coating, ink-jet printing, and spray pyrolysis deposition are the prevalently used methods for manufacturing the channel layer of TFTs using solution-based technologies [26,27,28,29,30].…”

Section: Introductionmentioning

confidence: 99%

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Highly Transparent and Surface-Plasmon-Enhanced Visible-Photodetector Based on Zinc Oxide Thin-Film Transistors with Heterojunction Structure

et al. 2019

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Highly transparent zinc oxide (ZnO)-based thin-film transistors (TFTs) with gold nanoparticles (AuNPs) capable of detecting visible light were fabricated through spray pyrolysis on a fluorine-doped tin oxide substrate. The spray-deposited channel layer of ZnO had a thickness of approximately 15 nm, and the thickness exhibited a linear increase with an increasing number of sprays. Furthermore, the ZnO thin-film exhibited a markedly smoother channel layer with a significantly lower surface roughness of 1.84 nm when the substrate was 20 cm from the spray nozzle compared with when it was 10 cm away. Finally, a ZnO and Au-NP heterojunction nanohybrid structure using plasmonic energy detection as an electrical signal, constitutes an ideal combination for a visible-light photodetector. The ZnO-based TFTs convert localized surface plasmon energy into an electrical signal, thereby extending the wide band-gap of materials used for photodetectors to achieve visible-light wavelength detection. The photo-transistors demonstrate an elevated on-current with an increase of the AuNP density in the concentration of 1.26, 12.6, and 126 pM and reach values of 3.75, 5.18, and 9.79 × 10−7 A with applied gate and drain voltages. Moreover, the threshold voltage (Vth) also drifts to negative values as the AuNP density increases.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Highly Transparent and Surface-Plasmon-Enhanced Visible-Photodetector Based on Zinc Oxide Thin-Film Transistors with Heterojunction Structure

et al. 2019

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Ultralow Voltage Driving Circuits Based on Coplanar a‐InGaZnO TFTs with Photopatternable Ionic Polymer Gate Dielectric

Lee

Kim

et al. 2019

Adv Elect Materials

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The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/aelm.201900359. Dielectric TransistorsAmorphous indium gallium zinc oxide (a-InGaZnO) thin film transistor (TFT) has attracted much attention as a nextgeneration display backplane technology owing to its high fieldeffect mobility, low leakage current, optical transparency in the visible range, and excellent large-area uniformity. [1][2][3][4] Moreover, due to the recent increasing attention on flexible, wearable, and portable electronics as a future key technology, the demand for high-performance devices and their integrated circuits with the solution-processable active layer of a-InGaZnO TFTs has been actively researched. [5][6][7] However, despite all the merits of a-InGaZnO TFTs, a high operation voltage (i.e., >20 V) can easily cause high power consumption. Thus, lowering the

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Structural and optical properties of (AgxCu1-x)2ZnSnS4 thin films synthesised via solution route

Kumar

Ingole

2017

Journal of Alloys and Compounds

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The highly electrical performances of flexible indium-zinc-oxide based thin-film transistors on stability improvement by passivation layer

Cited by 4 publications

References 27 publications

Highly Transparent and Surface-Plasmon-Enhanced Visible-Photodetector Based on Zinc Oxide Thin-Film Transistors with Heterojunction Structure

Highly Transparent and Surface-Plasmon-Enhanced Visible-Photodetector Based on Zinc Oxide Thin-Film Transistors with Heterojunction Structure

Ultralow Voltage Driving Circuits Based on Coplanar a‐InGaZnO TFTs with Photopatternable Ionic Polymer Gate Dielectric

Structural and optical properties of (AgxCu1-x)2ZnSnS4 thin films synthesised via solution route

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