The history of ceramic filters

Fujishima, S.

doi:10.1109/58.818743

Cited by 45 publications

(12 citation statements)

References 13 publications

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“…It is the solid solution of PbZrO 3 and PbTiO 3 and possesses the ABO 3 perovskite structure. Discovered in the 1950s, PZT was successfully commercialized as a ceramic filter due to its superior piezoelectric properties . Recent trends to integrate more functionalities require the application of ferroelectric thin films in silicon technology.…”

Section: Fundamental Concepts Of Ferroelectrics and 2d Materialsmentioning

confidence: 99%

Ferroelectric‐Gated Two‐Dimensional‐Material‐Based Electron Devices

Zhou

Chai

2017

Adv Elect Materials

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materials are barely manifested owing to the large contact resistances and uncontrolled channel doping levels in such devices. [12,13] In the fifty year successful history of silicon metal-oxide-semiconductor (MOS) technology, silicon triumphed over germanium, which has even higher mobility than silicon. The key to the success of silicon MOS technology is the use of readily formed stable silicon oxide as gate dielectric and passivation layer. [14] However, silicon has reached its physical limit of downward scaling. [15] Emerging 2D materials have joined the race to potentially replace silicon. Similar to the case of the original silicon MOS technology, the importance of the gate dielectric and surrounding passivation dielectric should not be underestimated in constructing 2D-material-based electron devices. It has been reported that the performances of 2D FETs are improved when they are built on diamond-like carbon, [16] boron nitride, [17] and high-k dielectrics, [18] due to suppressed surface and interface scattering. [19,20] Although most of the reported 2D FETs use SiO 2 as the back-gate dielectric to easily identify the ultra-thin exfoliated 2D materials by optical microscope, it is unlikely that SiO 2 will be used in the final integration process. The operating voltage and power consumed would be much larger than current mainstream technology. Considering the ever-increasing demand for mobile computation in portable electronics, low-power and low-voltage operation is a prerequisite for any emerging semiconductor material aiming to be the successor to silicon technology. This requirement translates into the application of high-k or ultra-high-k dielectrics in 2D electron devices.Regarding the choices of high-k dielectrics, those already mature in current technology, such as HfO 2 , Al 2 O 3 , etc., formed by atomic layer deposition (ALD), are being investigated. [21][22][23] There are many challenges to directly integrating these high-k dielectrics with 2D materials due to the lack of dangling bonds on 2D material surfaces. On the other hand, there are many functional materials featuring high-k properties along with other unique properties such as ferroelectricity, [24,25] ferromagnetism, piezoelectricity, [26] and electro-optical properties. [27] As well as allowing low-voltage operation, these high-k properties expand the functionality of current electronic systems with the integration of functional materials. [28] Furthermore, 2D materials prove even more versatile when integrated with functional materials.Two-dimensional (2D) materials have the potential to extend state-of-theart semiconductor technology to sub-nanometer scales and have inspired numerous research efforts exploring novel device structures. The key elements of electron devices, including low-resistance contacts and reliable gate dielectrics, have to be optimized to complete a functional device. This review highlights recent studies on the integration of ferroelectrics with 2D materials to implement 2D electron devices. The high polarizatio...

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Section: Fundamental Concepts Of Ferroelectrics and 2d Materialsmentioning

confidence: 99%

Ferroelectric‐Gated Two‐Dimensional‐Material‐Based Electron Devices

Zhou

Chai

2017

Adv Elect Materials

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“…Ferroelectric barium titanate (BaTiO 3 ) has widely been used as a material for electronic devices since its discovery in the 1940s [1,2]. Nowadays, understanding, controlling and characterizing the microstructures of materials are important for the continual miniaturization of electronic devices.…”

Section: Introductionmentioning

confidence: 99%

In-situ size control and structural characterization of barium titanate nanocrystal prepared by crystallization of amorphous phase

Kim

Ohshima

Rim

et al. 2009

Journal of Crystal Growth

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“…R. Cooke, Jr., Don A. Berlincourt (all at Clevite Corporation) and others, which led to the evolution of the entire family of PZT piezoceramics. Over the decade of the 1960s, the group led by B. Jaffe, at Clevite Corporation, were unquestionably world leaders in this subject area [24][25][26].…”

Section: Late 1950s To Late 1960s: Clevite Corporation-introduction Omentioning

confidence: 99%

Piezoelectric Transformers: An Historical Review

Carazo¹

2016

Actuators

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Piezoelectric transformers (PTs) are solid-state devices that transform electrical energy into electrical energy by means of a mechanical vibration. These devices are manufactured using piezoelectric materials that are driven at resonance. With appropriate design and circuitry, it is possible to step up and step down the voltages between the input and output sections of the piezoelectric transformer, without making use of magnetic materials and obtaining excellent conversion efficiencies. The initial concept of a piezoelectric ceramic transformer was proposed by Charles A. Rosen in 1954. Since then, the evolution of piezoelectric transformers through history has been linked to the relevant work of some excellent researchers as well as to the evolution in materials, manufacturing processes, and driving circuit techniques. This paper summarizes the historical evolution of the technology.Keywords: piezoelectric transformer; piezoelectric-based power supply; non-magnetic transformers Historical Introduction 1920s-1930s: Early Studies on Piezoelectric Transformers Using Salt Rochelle Single CrystalThe first studies on electrical to electrical conversion using piezoelectric materials took place in the late 1920s and early 1930s. Alexander McLean Nicolson has the honor of being the first researcher to investigate the idea of a piezoelectric transformer. Nicolson considered two single crystal blocks preloaded against each other with an external frame (Figure 1). Abstract: Piezoelectric transformers (PTs) are solid-state devices that transform electrical energy into electrical energy by means of a mechanical vibration. These devices are manufactured using piezoelectric materials that are driven at resonance. With appropriate design and circuitry, it is possible to step up and step down the voltages between the input and output sections of the piezoelectric transformer, without making use of magnetic materials and obtaining excellent conversion efficiencies. The initial concept of a piezoelectric ceramic transformer was proposed by Charles A. Rosen in 1954. Since then, the evolution of piezoelectric transformers through history has been linked to the relevant work of some excellent researchers as well as to the evolution in materials, manufacturing processes, and driving circuit techniques. This paper summarizes the historical evolution of the technology.

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The history of ceramic filters

Cited by 45 publications

References 13 publications

Ferroelectric‐Gated Two‐Dimensional‐Material‐Based Electron Devices

Ferroelectric‐Gated Two‐Dimensional‐Material‐Based Electron Devices

In-situ size control and structural characterization of barium titanate nanocrystal prepared by crystallization of amorphous phase

Piezoelectric Transformers: An Historical Review

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