The E(k) Relation for a Two‐Band Scheme of Semiconductors and the Application to the Metal‐Semiconductor Contact

Abstract

The E(k) behaviour is calculated for a two-band scheme as an approximation for the vicinity of the forbidden gap of a semiconductor. An estimate is given for the validity of the effective mass approximation in the forbidden gap. Application is made to the metal-semiconductor contact and it is shown that this model describes the experiments for semiconductors ranging from covalent to the ionic type.Der E(k)-Verlauf wird berechnet fur das Zweibandmodell eines Halbleiters als Niiherung fur die Umgebung der verbotenen Zone. Eine Abschatzung fiir die Gultigkeit der Effektivmassen-Approximation in der verbotenen Zone wird angegeben. Die Anwendung auf den Metall-Halbleiter-Kontakt zeigt, daB durch dieses Model1 die Experimente fur Halbleiter vom kovalenten bis zum ionischen Typ gut wiedergegeben werden.

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