The J – V Hysteresis Behavior and Solutions in Perovskite Solar Cells

et al. 2021

Small

Self Cite

Defects are considered to be one of the most significant factors that compromise the power conversion efficiencies and long‐term stability of perovskite solar cells. Therefore, it is urgent to have a profound understanding of their formation and influence mechanism, so as to take corresponding measures to suppress or even completely eliminate their adverse effects on device performance. Herein, the possible origins of the defects in metal halide perovskite films and their impacts on the device performance are analyzed, and then various methods to reduce defect density are introduced in detail. Starting from the internal and interfacial aspects of the metal halide perovskite films, several ways to improve device performance and long‐term stability including additive engineering, surface passivation, and other physical treatments (annealing engineering), etc., are further elaborated. Finally, the further understanding of defects and the development trend of passivation strategies are prospected.

Section: Intrinsic Point Defectsmentioning

confidence: 99%

Origin, Influence, and Countermeasures of Defects in Perovskite Solar Cells

Lei

et al. 2021

Small

Self Cite

“…Regardless of whether the device has a porous/planar, n–i–p, or p–i–n structure, an optimization of multiple interfaces is required [ 1 , 4 , 15 , 40 ]. A perfect interface band arrangement is not only conducive to an efficient charge extraction, transmission, and collection, but is also conducive to reducing the interface charge accumulation and J–V hysteresis [ 41 , 42 ].…”

Section: Psc Interfacementioning

confidence: 99%

Review of Interface Passivation of Perovskite Layer

Liu

et al. 2021

Nanomaterials

Perovskite solar cells (PSCs) are the most promising substitute for silicon-based solar cells. However, their power conversion efficiency and stability must be improved. The recombination probability of the photogenerated carriers at each interface in a PSC is much greater than that of the bulk phase. The interface of a perovskite polycrystalline film is considered to be a defect-rich area, which is the main factor limiting the efficiency of a PSC. This review introduces and summarizes practical interface engineering techniques for improving the efficiency and stability of organic–inorganic lead halide PSCs. First, the effect of defects at the interface of the PSCs, the energy level alignment, and the chemical reactions on the efficiency of a PSC are summarized. Subsequently, the latest developments pertaining to a modification of the perovskite layers with different materials are discussed. Finally, the prospect of achieving an efficient PSC with long-term stability through the use of interface engineering is presented.

“…In addition, it is necessary to measure the hysteresis of the device to better evaluate the performance. The hysteresis index (HI) can be calculated by eq where PCE RS and PCE FS represent PCE values measured under a reverse scan (RS) and forward scan (FS), respectively. The HI values of the pristine, 5, 10, and 15% device are 0.0935, 0.0719, 0.0562, and 0.0928, respectively.…”

Section: Resultsmentioning

confidence: 99%

Low-Trap-Density CsPbX₃ Film for High-Efficiency Indoor Photovoltaics

ACS Appl. Mater. Interfaces

Zhao

et al. 2022

Self Cite

The continuous advancement of the Internet of Things (IoT) and photovoltaic technology has promoted the development of indoor photovoltaics (IPVs) that powers wireless devices. Nowadays, the CsPbX 3 perovskite has received widespread attention because of its high power conversion efficiency (PCE) in an indoor environment and suitable band gap for IPVs. In this work, we regulated the thickness of the photoactive layer (to optimize the carrier transport process without affecting indoor absorption) and bromine substitution (to adjust the band gap and improve the quality of the film) to reduce trap-assisted carrier recombination. A CsPbI 2.7 Br 0.3 perovskite cell with excellent performance was obtained, which is superior to c-Si cells in a low-light environment. The optimized device achieved PCE values of 32.69 and 33.11% under a 1000 lux fluorescent lamp and white lightemitting diode (WLED) illumination. The J−V hysteresis of the device is also effectively suppressed. Moreover, it has a steady-state output power of 7.76 μW (0.09 cm 2 , and can be enhanced by enlarging the areas), which can meet the consumption of many small wireless devices. It is worth noting that the optimized device has excellent applicability to be used in a complex indoor environment.