The I‐V characteristics of polycrystalline silicon diodes and the energy distribution of traps in grain boundaries

Abstract

The current‐voltage characteristics of p+pn+ structure polycrystalline silicon diodes and the energy distribution of traps in the grain boundaries are measured before and after plasma hydrogenation. Plasma hydrogenation increases the forward current and reduces the reverse current. The energy distribution of nonhydrogenated film has a peak around the midgap; this peak disappears after hydrogenation. The change in diode current produced by plasma hydrogenation can be explained by this difference in the energy distribution of the traps.