The illumination effects on the current conduction mechanisms of the Au/(Er₂O₃:PVC)/n‐Si (MPS) Schottky diodes

Abstract

Photoresponse of the Au/(Er2O3:PVC)/n‐Si diode was executed in a wide range of illumination intensity (P). Its basic electrical parameters such as ideality factor (n), barrier height (ΦB0), series and shunt resistances (Rs, Rsh), photocurrent (Iph), energy‐dependence of interface states (Nss), and photosensitivity (S) were calculated from the results of the current–voltage (I–V) measurements. At the negative‐bias region, an increase in Iph is observed due to the e−‐h+ pairs that occur as a result of increasing P and their drift in opposite directions under the internal electric field. The ln(Iph)–ln(P) plot shows a good linear behavior under various applied voltages. Their slopes vary from 1.47 to 1.64, indicating that empty trap levels, that is, levels not occupied by charges, are of low density. The values n, ΦB0, and Rs were obtained using the thermionic emission theory, Cheung, and Norde functions. The value of ΦB0 decreases with increasing n and P as linearly with ΦB0(n) = (−0.143n + 1.118) eV and ΦB0(P) = (−2 × 10−4P + 0.831) eV, respectively. This illumination coefficient of ΦB0 (=−2 × 10−4 eV/[mW/cm2]) is close to the temperature coefficient bandgap of Si (=−4.73 × 10−4 eV/K). These results show that the performed Au/(Er2O3:PVC)/n‐Si diode has excellent photo‐response and can be successfully used in photovoltaic applications instead of conventional metal–semiconductor diodes.

Photodiode behavior and capacitive performance of ZnO nanoflakes synthesized by electrochemical deposition

“…Cheung and Norde separately proposed two different methods to calculate the Schottky heterostructure parameters. A detailed explanation and calculation of their approximations can be found in the literature [34][35][36]. We calculated Cheung's functions of dV/dlnI and H(I), and Norde's function of F(V) according to the literature.…”

Investigation of illumination-dependent electrical and photodiode properties and conduction mechanism of the Al/p-Si contact with Schiff base compound (Pyr-Pic) interlayer

“…Photosensitivity, a characteristic parameter of photodiodes, is defined as the ratio of photocurrent to dark current (I ph /I dark ) [44,45]. As seen in table 4, the photosensitivity (S) of the Al/Pyr-Pic/p-Si/Al Schottky diode is enhanced by the illumination power, which leads to the generation of charge carriers.…”

Hybrid photonic device based on Graphene Oxide (GO) doped P3HT-PCBM/p-Silicon for photonic applications

“…Due to direction of the internal and external electric fields, the reverse bias's total electric field has a larger magnitude than the forward bias. As a result of the larger junction's electric field value, photocurrent rises in the reverse bias area [4,49]. In addition, the photocurrent of S2 and S3 is lower than S1 device under 100 mW cm −2 .…”