2019
DOI: 10.29252/ijop.13.2.171
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The Impact of Doping on the Anti-Resonance Effects of A11g Mode of InSe

Abstract: A comparative study of antiresonance effects in InSe and InSe doped with GaS, using the resonant Raman spectroscopy is presented. The nonpolar optical phonon of 1 1g A symmetry in InSe exhibits a pronounced decrease in the Raman cross-section at excitation energy 2.585 eV. In InSe doped with GaS samples, it is found that the anti-resonance behavior decreases as doping contents are increased. To account these observations, a model is applied to explain and interpret the Raman intensity evolution versus incident… Show more

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Cited by 2 publications
(2 citation statements)
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“…However, the most interesting is the antiresonant behaviour under 2.54 eV excitation, which reveals a quick decrease of the (1) intensity of almost 2 orders of magnitude in the temperature range from 80 to 140 K. It results in the complete vanishing of the (1) mode for range from 150 K to 180 K. At higher temperatures, slow linear growth of the (1) intensity is visible. This shape of the (1) intensity reflects the reported enhancement profile for this mode as a function of excitation energy in InSe in the vicinity of the B transition 30 , 47 . Consequently, we can speculate that the B transition energy varies from about 2.54 to 2.41 eV with temperature changes from about 50 to 270 K. The origin of the antiresonance can be described similarly to GaSe in terms of quantum interference.…”
Section: Resultssupporting
confidence: 77%
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“…However, the most interesting is the antiresonant behaviour under 2.54 eV excitation, which reveals a quick decrease of the (1) intensity of almost 2 orders of magnitude in the temperature range from 80 to 140 K. It results in the complete vanishing of the (1) mode for range from 150 K to 180 K. At higher temperatures, slow linear growth of the (1) intensity is visible. This shape of the (1) intensity reflects the reported enhancement profile for this mode as a function of excitation energy in InSe in the vicinity of the B transition 30 , 47 . Consequently, we can speculate that the B transition energy varies from about 2.54 to 2.41 eV with temperature changes from about 50 to 270 K. The origin of the antiresonance can be described similarly to GaSe in terms of quantum interference.…”
Section: Resultssupporting
confidence: 77%
“…Moreover, we believe that the assumption that the temperature evolution of the B transition is similar to the optical band gap in InSe [44][45][46] may lead to misestimation. (1) intensity reflects the reported enhancement profile for this mode as a function of excitation energy in InSe in the vicinity of the B transition 30,47 . Consequently, we can speculate that the B transition energy varies from about 2.54 to 2.41 eV with temperature changes from about 50 to 270 K. The origin of the antiresonance can be described similarly to GaSe in terms of quantum interference.…”
Section: Effect Of the Excitation Energy On The Raman Scattering Atosupporting
confidence: 70%