The Impact of Forming Temperature and Voltage on the Reliability of Filamentary RRAM

Chen, G.Y.; Lee, F.M.; Lin, Yu-Yu; Tseng, Po-Hao; Hsu, K.C.; Lee, D.Y.; Lee, M.H.; Lung, Hsiang-Lan; Hsieh, Kuang-Yeu; Wang, K.C.; Lu, Chih‐Yuan; Wu, Min-Lin

doi:10.1109/vlsi-tsa.2019.8804662

Cited by 2 publications

(3 citation statements)

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“…At every temperature, we measured 30 fresh structures. We can observe that the forming voltage decreases with the increase of temperature, which agrees with theory and other experiments on breakdown phenomena [ 29 , 30 ]. For temperatures below 0 °C, we observe that forming voltage value saturates and is weakly dependent on temperature (down to −50 °C).…”

Section: Resultssupporting

confidence: 91%

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Investigation of the Temperature Effect on Electrical Characteristics of Al/SiO2/n++-Si RRAM Devices

et al. 2022

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In this work, we investigate the effect of temperature on the electrical characteristics of Al/SiO2/n++-Si RRAM devices. We study the electroforming process and show that forming voltage and time-to-breakdown are well described by Weibull distribution. Experimental current–voltage characteristics of Al-SiO2-(n++Si) structures are presented and discussed at different temperatures. We show that some intermediate resistance states can be observed at higher temperatures. In our analysis, we identify Space Charge Limited Conduction (SCLC) as the dominating transport mechanism regardless of the operating temperature.

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Section: Resultssupporting

confidence: 91%

“…We can observe that temperature affects the HRS state, in particular for RESET cycle. Those results indicate that thermal effects have a pronounced effect on the device’s performance and may cause partial filament formation/disruption [ 29 ].…”

Section: Resultsmentioning

confidence: 99%

Investigation of the Temperature Effect on Electrical Characteristics of Al/SiO2/n++-Si RRAM Devices

et al. 2022

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“…The increasing demand for mass data storage and the advent of neuromorphic computing technology have attracted a great deal of attention to exploring emerging non‐volatile memory technologies. Resistive Random Access Memory (RRAM, also referred to as memristor), stands out as one of the most promising candidates, with the advantages of good scalability, [ 1–3 ] low power consumption, [ 4–6 ] and fast switching speed. [ 7–9 ] 2D memristors have demonstrated promising performance in the past few years, including a high ON/OFF ratio, [ 10–12 ] low switching thresholds, [ 13–15 ] fast switching speed, [ 16–18 ] ultra‐low power consumption (fJ per switching), [ 19–21 ] and GHz operation.…”

Section: Introductionmentioning

confidence: 99%

Reliability Improvement and Effective Switching Layer Model of Thin‐Film MoS₂ Memristors

Huang

Mohan

et al. 2023

Adv Funct Materials

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Abstract2D memristors have demonstrated attractive resistive switching characteristics recently but also suffer from the reliability issue, which limits practical applications. Previous efforts on 2D memristors have primarily focused on exploring new material systems, while damage from the metallization step remains a practical concern for the reliability of 2D memristors. Here, the impact of metallization conditions and the thickness of MoS2 films on the reliability and other device metrics of MoS2‐based memristors is carefully studied. The statistical electrical measurements show that the reliability can be improved to 92% for yield and improved by ≈16× for average DC cycling endurance in the devices by reducing the top electrode (TE) deposition rate and increasing the thickness of MoS2 films. Intriguing convergence of switching voltages and resistance ratio is revealed by the statistical analysis of experimental switching cycles. An “effective switching layer” model compatible with both monolayer and few‐layer MoS2, is proposed to understand the reliability improvement related to the optimization of fabrication configuration and the convergence of switching metrics. The Monte Carlo simulations help illustrate the underlying physics of endurance failure associated with cluster formation and provide additional insight into endurance improvement with device fabrication optimization.

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The Impact of Forming Temperature and Voltage on the Reliability of Filamentary RRAM

Cited by 2 publications

References 2 publications

Investigation of the Temperature Effect on Electrical Characteristics of Al/SiO2/n++-Si RRAM Devices

Investigation of the Temperature Effect on Electrical Characteristics of Al/SiO2/n++-Si RRAM Devices

Reliability Improvement and Effective Switching Layer Model of Thin‐Film MoS₂ Memristors

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The Impact of Forming Temperature and Voltage on the Reliability of Filamentary RRAM

Cited by 2 publications

References 2 publications

Investigation of the Temperature Effect on Electrical Characteristics of Al/SiO2/n++-Si RRAM Devices

Investigation of the Temperature Effect on Electrical Characteristics of Al/SiO2/n++-Si RRAM Devices

Reliability Improvement and Effective Switching Layer Model of Thin‐Film MoS2 Memristors

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Reliability Improvement and Effective Switching Layer Model of Thin‐Film MoS₂ Memristors