2013
DOI: 10.1088/1674-4926/34/6/062001
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The impact of germanium in strained Si/relaxed Si1−xGexon carrier performance in non-degenerate and degenerate regimes

Abstract: The impact of the fraction of germanium on the carrier performance of two-dimensional strained silicon, which embraces both the non-degenerate and degenerate regimes, is developed. In this model, the Fermi integral of order zero is employed. The impact of the fraction of germanium on the relaxed Si 1 x Ge x substrate (x/, carrier concentration and temperature is reported. It is revealed that the effect of x on the hole concentration is dominant for a normalized Fermi energy of more than three, or in other word… Show more

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“…Many high-mobility materials [1][2][3][4][5][6], such as Germanium, III-V are widely used as alternative Si channel materials to improve the device current density. Germanium (Ge) is a promising candidate of sub-14 nm technology for the p channel device due to its high hole mobility.…”
Section: Introductionmentioning
confidence: 99%
“…Many high-mobility materials [1][2][3][4][5][6], such as Germanium, III-V are widely used as alternative Si channel materials to improve the device current density. Germanium (Ge) is a promising candidate of sub-14 nm technology for the p channel device due to its high hole mobility.…”
Section: Introductionmentioning
confidence: 99%