The impact of grain size on the photogenerated current in polycrystalline silicon solar cells

Ghannam, M.Y.

doi:10.1016/0960-1481(95)00065-r

Cited by 3 publications

(1 citation statement)

References 2 publications

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“…Camadas de filmes semicondutores de elevada pureza comprometem 50% do custo de uma célula fotovoltaica e melhorias em seus processos de produção são fundamentais para a redução dos custos (Goetzberger et al, 2002). Além disso, é bem conhecido que menores valores de tamanho de grão são fatores limitantes ao aumento da eficiência de células solares produzidas com pc-Si (Ghannam 1995;Beaucarne et al, 2004;Fujisaki et al, 2002;Kurbobe et al, 2001).…”

Section: Introductionunclassified

Caracterização Óptica E Microestrutural De Filmes De Silício Policristalino Depositados Por CVD Térmico Para Substratos De Células Solares

Carvalho,

Faria,

Branco

et al. 2010

Anais Congresso Brasileiro De Energia Solar - CBENS

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The crystalline silicon (c-Si) maintains its leading position as an important marketing product with an efficiency conversion projection of 28% by 2050. High purity semiconductor films commit 50% of a photovoltaic cell cost and improvements in their production processes is the key to reducing costs. Moreover, the industry of III Congresso Brasileiro de Energia Solar -Belém, 21 a 24 de setembro de 2010 photovoltaic devices is very dependent on the high quality waste from microelectronics industry of Si wafers, which are approximately 0.470mm in thick. With the shrinking of microelectronic devices such waste becomes proportionally scarce. Current efforts focus on preparation of alternative photovoltaic devices, based on the active light absorbing layer thickness reduction. These lower-cost cell substrates known as silicon thin films wafers equivalents. It is well known that, in these devices, lower values of grain size are limiting factors to increase the efficiency of solar cells produced with pc-Si. The aim of this work is to characterize optical and micro structural the pc-Si films prepared by gas chemical vapor deposition (thermal CVD). These films were prepared as an initial reference for low cost substrates production for solar cells based on the wafer equivalent concept. The characterizations were performed by Raman microscopy, optical microscopy and scanning electron microscopy with EBSD signals. The results were correlated with additional X-ray diffraction measurements. They demonstrated the deposition of multicrystalline Si (mc-Si) films with high crystalline quality. Also it showed mc-Si grain size considerably higher and deposition rates three times higher than recently values reported by other authors.

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Section: Introductionunclassified

Caracterização Óptica E Microestrutural De Filmes De Silício Policristalino Depositados Por CVD Térmico Para Substratos De Células Solares

Carvalho,

Faria,

Branco

et al. 2010

Anais Congresso Brasileiro De Energia Solar - CBENS

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Diffusion length and grain boundary recombination activity determination by means of induced current methods

Shabelnikova

Yakimov

2016

Superlattices and Microstructures

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Quantitative interpretation of electron-beam-induced current grain boundary contrast profiles with application to silicon

Corkish

Puzzer

Sproul

et al. 1998

Journal of Applied Physics

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An improved method is described for extracting material parameters from an experimental electron-beam-induced current (EBIC) contrast profile across a vertical grain boundary by directly fitting an analytical expression. This allows the least-squares values of the grain boundary recombination velocity and the diffusion length in each grain to be determined without the need for the reduction of the experimental profile to a few integral parameters, as is required in a previously reported method. Greater accuracy of the extracted values is expected since none of the information contained in the experimental contrast data is discarded and a less extensive spatial range of measured data is required than in the commonly used method. Different models of the carrier generation volume are used in the fitting and the effect of the choice of generation model on extracted values is investigated. In common with other EBIC approaches, this method is insensitive to changes in the diffusion length when the collection efficiency is high and diffusion lengths may not be reliably established in those cases.

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The impact of grain size on the photogenerated current in polycrystalline silicon solar cells

Cited by 3 publications

References 2 publications

Caracterização Óptica E Microestrutural De Filmes De Silício Policristalino Depositados Por CVD Térmico Para Substratos De Células Solares

Caracterização Óptica E Microestrutural De Filmes De Silício Policristalino Depositados Por CVD Térmico Para Substratos De Células Solares

Diffusion length and grain boundary recombination activity determination by means of induced current methods

Quantitative interpretation of electron-beam-induced current grain boundary contrast profiles with application to silicon

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