The impact of growth parameters on the formation of InAs quantum dots on GaAs(100) by MOCVD

OMVPE of InAs quantum dots on an InGaP surface

“…(1) assumes the QD shape is approximated as a spherical cap which is a reasonable assumption based on our current AFM measurements and those of prior studies [6,7,27] and is commonly used as a quantitative approximation despite the faceting that is likely present [29] in real QDs. While the size of the QDs is changing significantly with different surfaces, the aspect ratio is nearly constant, ranging from 0.15 to 0.16, which implies the shape of the InAs QD is not significantly altered on the InGaP surface.…”

“…Considerable control of QD morphology and properties has been achieved using approaches including epitaxy condition modification [6][7][8], InGaAs interlayers or dots-in-a-well [9][10][11], and the use of Sb-containing materials [12,13]. An additional means to control QD morphology is the use of substrate misorientation.…”

Synthesis, Self-assembly and Optoelectronic Properties of Monodisperse ZnO Quantum Dots

“…A number of synthetic approaches have been used to fabricate those QDs, such as sol-gel [15], hydrothermal growth [16], thermal decomposition [17], pulsed laser ablation [18], flame spray pyrolysis [19], etc. [20,21]. Zinc oxide (ZnO) is a direct band-gap (E g = 3.37eV) semiconductor with an exciton binding energy as large as 60 meV at room temperature.…”

Lateral shape of InAs/GaAs quantum dots in vertically correlated structures

“…Considerable effort has been devoted to understanding and controlling the formation of QD structures. Many works devoted to the QD shape discuss the lens, pyramid or truncated pyramid types of QDs and their aspect ratio (height/diameter) [2,3], while only few works are concerned with the lateral shape of QDs and their elongation despite the fact that the latter changes considerably the electronic structure, especially the energy of excited states [4].…”