The impact of laser shock waves on anodic oxide - compound semiconductor interface

Abstract

The present work shows that the induced positive charge value at the anodic oxide HgCdTe (AO-MCT) interface reaches its constant value (6.0±1.0)⋅10 11 cm 2 under laser shock wave (LSW) treatment. We demonstrate that this treatment decreases electron concentration in a converted n-type layer by one order of magnitude in annealed AO-MCT based structures, and the annealing time needed to have this layer disappeared decreases as well. The model of LSW impact on the AO-MCT interface is analysed.