The impact of mesa etching method on IR photodetector current-voltage characteristics

Smoczyński, Dariusz; Czuba, Krzysztof; Papis-Polakowska, E.; Kozłowski, Paweł; Ratajczak, J.; Sankowska, Iwona; Jasik, A.

doi:10.1016/j.mssp.2020.105219

Cited by 8 publications

(4 citation statements)

References 11 publications

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“…Besides titanium, chromium can also be used for this purpose [ 26 ]. We decided to use the former due to its compatibility with antimonide-based IR detector technology developed at our institute [ 27 , 28 ]. Next, under bump metallization consisting of titanium, platinum, and gold layers (Ti/Pt/Au) with thicknesses of 10 nm, 20 nm, and 300 nm, respectively, was deposited using magnetron sputtering.…”

Section: Methodsmentioning

confidence: 99%

Indium-Based Micro-Bump Array Fabrication Technology with Added Pre-Reflow Wet Etching and Annealing

et al. 2021

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Indium-based micro-bump arrays, among other things, are used for the bonding of infrared photodetectors and focal plane arrays. In this paper, several aspects of the fabrication technology of micrometer-sized indium bumps with a smooth surface morphology were investigated. The thermal evaporation of indium has been optimized to achieve ~8 μm-thick layers with a small surface roughness of Ra = 11 nm, indicating a high packing density of atoms. This ensures bump uniformity across the sample, as well as prevents oxidation inside the In columns prior to the reflow. A series of experiments to optimize indium bump fabrication technology, including a shear test of single columns, is described. A reliable, repeatable, simple, and quick approach was developed with the pre-etching of indium columns in a 10% HCl solution preceded by annealing at 120 °C in N2.

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Section: Methodsmentioning

confidence: 99%

Indium-Based Micro-Bump Array Fabrication Technology with Added Pre-Reflow Wet Etching and Annealing

et al. 2021

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“…Поэтому в настоящее время применяются различные методы разделения многослойных структур на чипы, среди которых наибольшее распространение получили реактивное ионное травление в плазме (сухое травление), а также жидкостное химическое травление (ЖХТ). Применение плазменных технологий позволяет получить четкие стенки мез, качество поверхности которых влияет на электрические параметры фотодетекторов [7]. Метод ЖХТ обладает определенными преимуществами: не приводит к кристаллографическим повреждениям поверхности полупроводниковых материалов, сопутствующим методу реактивного ионного травления в плазме или возникновению радиационных дефектов, как при ионно-лучевом травлении гетероструктур А III B V , приводящим например к гашению люминесценции [8].…”

Section: вс калиновский ев контрош еа гребенщикова вм андреевunclassified

К 125-летию со дня рождения лауреата Нобелевской премии академика Николая Николаевича Семенова Архитектура мезы и эффективность InGaP/Ga(In)As/Ge солнечных элементов

Калиновский¹,

Контрош²,

Гребенщикова³

et al. 2021

Журнал Технической Физики

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It has been shown that the mesa architecture and achieved quality of the mesa sidewall of concentrator multijunction solar cells ensured increasing their efficiency up to 36.7% at the sunlight concentration before 100 (AMO; 0.136W/cm²). Creation of the mesa structure architecture with following separation of epitaxial plates of monolithic InGaP/GaAs/Ge nanoheterostructure into chips was carried out by single step chemical wet etching in the HBr:H2O2:H2O (8:1:100) through a photoresist mask to the depth of 12-18µm. Conditions of single step etching, which ensure formation of a smooth and even side surface of the InGaP/Ga(In)As/Ge nanoheterostructure mesa containing different in composition and thickness layers have been determined. Determination of the activation energy has shown that etching occurs in the diffusion region of the heterogeneous process. In raising etchant temperature from 2 to 36˚C, a change of the tilt angle in the Ge substrate region from 4.5 to 25 angular degrees is observed, what allows optimizing the amount of concentrator solar cells and their quality at final mechanical separation of the epitaxial plate into chips.

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Section: Introductionmentioning

confidence: 99%

“…The development of infrared (IR) detection technology depends primarily on improvements in the InAs/GaSb SL epitaxy [1] and post-growth processing [2]. To achieve optimal performance, the device architecture [3] as well as the mesa structure must be optimized to have vertical and smooth sidewalls to prevent crosstalk in the focal plane arrays (FPAs) with small pixel pitches, where the aspect ratio of the perimeter to the surface area is high [2,4]. The roughness of the surface mesa, presence of the reaction products, and surface density of electrically active defects, including broken chemical bonds, can all affect the magnitude of the surface leakage current [5].…”

Section: Introductionmentioning

confidence: 99%

The use of one-component plasma in the icp-rie etching process of periodic structures for applications in photodetector arrays

Różycka,

Jasik,

Kozłowski

et al. 2023

Metrology and Measurement Systems

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The paper presents the effect of ICP-RIE etching time using one-component plasma on various parameters of an InAs/GaSb type II superlattice matrix. In the studies, two samples used at different BCl3 gas flow rates were compared and it was found that using a lower flow rate of 7 sccm results in obtaining a smoother sidewall morphology. Next, five periodic mesa-shaped structures were etched under identical conditions, but using a different time. The results indicated that the ICP-RIE method using a BCl3 flow rate of 7 sccm, ICP:RIE power ratio of 300W:270W allowed the ICP:RIE formation of a periodic mesa-shaped structure with smooth and perpendicular sidewalls.

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The impact of mesa etching method on IR photodetector current-voltage characteristics

Cited by 8 publications

References 11 publications

Indium-Based Micro-Bump Array Fabrication Technology with Added Pre-Reflow Wet Etching and Annealing

Indium-Based Micro-Bump Array Fabrication Technology with Added Pre-Reflow Wet Etching and Annealing

К 125-летию со дня рождения лауреата Нобелевской премии академика Николая Николаевича Семенова Архитектура мезы и эффективность InGaP/Ga(In)As/Ge солнечных элементов

The use of one-component plasma in the icp-rie etching process of periodic structures for applications in photodetector arrays

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