The impact of oxygen on Ga doped ZnO film

Zhang, Yufeng; Zhao, Wenxiong; Wu, Qin; Lin, Xinlu; Zhu, Zhaojie; Li, Ruchun; Liu, Yuhang; Huang, Kai; Liu, Xiangxin

doi:10.1039/d2ra08263b

Cited by 3 publications

(1 citation statement)

References 29 publications

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“…The modification of the chemical composition of oxide semiconductor thin films, such as adjusting the cation ratio or incorporating foreign ions, is a simple, effective, and widely used method for improving visible-light transmission, tailoring the optical bandgap, and enhancing the electrical properties. The trivalent element gallium (Ga) is one of the most promising candidates as an n-type dopant, mainly because of the use of Ga substitution for Zn (Ga Zn , donor defect) to enhance the electrical conductivity of ZnO-based films for the application of high-performance optoelectronic devices [13,14]. Kim et al proposed that the incorporation of Ga into the hexagonal wurtzite lattice of ZnO crystals could attenuate interfacial charge transfer between Ga-doped ZnO nanocrystals because the Fermi level of ZnO nanocrystals is increased by increasing Ga dopants [15].…”

Section: Introductionmentioning

confidence: 99%

Tailoring of the Structural, Optical, and Electrical Characteristics of Sol-Gel-Derived Magnesium-Zinc-Oxide Wide-Bandgap Semiconductor Thin Films via Gallium Doping

Tsay,

Chen,

Tsai

2023

Materials

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The Ga-doped Mg0.2Zn0.8O (GMZO) transparent semiconductor thin films were prepared using the sol-gel and spin-coating deposition technique. Changes in the microstructural features, optical parameters, and electrical characteristics of sol-gel-synthesized Mg0.2Zn0.8O (MZO) thin films affected by the amount of Ga dopants (0–5 at%) were studied. The results of grazing incidence X-ray diffraction (GIXRD) examination showed that all as-prepared MZO-based thin films had a wurtzite-type structure and hexagonal phase, and the incorporation of Ga ions into the MZO nanocrystals refined the microstructure and reduced the average crystallite size and flatness of surface roughness. Each glass/oxide thin film sample exhibited a higher average transmittance than 91.5% and a lower average reflectance than 9.1% in the visible range spectrum. Experimental results revealed that the optical bandgap energy of the GMZO thin films was slightly higher than that of the MZO thin film; the Urbach energy became wider with increasing Ga doping level. It was found that the 2 at% and 3 at% Ga-doped MZO thin films had better electrical properties than the undoped and 5 at% Ga-doped MZO thin films.

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Section: Introductionmentioning

confidence: 99%

Tailoring of the Structural, Optical, and Electrical Characteristics of Sol-Gel-Derived Magnesium-Zinc-Oxide Wide-Bandgap Semiconductor Thin Films via Gallium Doping

Tsay,

Chen,

Tsai

2023

Materials

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Tailoring Ga‐Doped ZnO Thin Film Properties for Enhanced Optoelectric Device Performance: Argon Flow Rate Modulation and Dynamic Sputtering Geometry Analysis

Nur‐E‐Alam,

Ferdaous,

Alghafis

et al. 2024

Solar RRL

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The impact of dynamic sputtering geometry on the properties of ZnO: Ga (GZO) thin film nanomaterials is investigated by systematically varying Ar flow rates and substrate positions during the film growth. The structural, optical, and electrical characteristics of GZO layers, deposited from a ZnO: Ga (5.7 wt%) ceramic‐type sputtering target, are comprehensively evaluated to reveal the relationship between the sputtering geometry and material properties. The obtained electrical properties, comparatively high carrier mobility 11.3 × 101 cm2 V−1 s−1 and the lowest resistivity 1.13 × 10−3 Ω‐cm, together with a moderately high optoelectric figure of merit with the films prepared using around 6 sccm Ar‐flow rate (corresponding to around 4.92 mTorr Ar partial pressure) reveal distinct correlations between the sputtering conditions and thin film properties, providing insights into the optimization of sputtering parameters for tailored material synthesis required for advanced and emerging applications. The GZO thin film (prepared with the optimal setting of 6 sccm Ar flow rate) exhibits remarkable optoelectronic capabilities as a transport layer in solar cells, reaching peak efficiencies of 26.34% for CIGS, 14.142% for CdTe, and 24.289% for Cs2AgBiBr6 perovskite in SCAPS‐1D simulated models. This study advances sputtering techniques for precise engineering of functional nanomaterials with enhanced performance and versatility, contributing to material synthesis optimization for emerging applications.

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The Influence of Precursors on the Morpho-Structure of Zinc Oxide

MODAN,

SCHIOPU,

DUCU

et al. 2024

J. Sci. Arts

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This paper presents the influence of different precursors on the morphostructure of zinc oxide nanoparticles used for the impregnation of polystyrene (PES) filters. Zinc oxide nanoparticles were synthesized by a microwave and ultrasound-assisted hydrolytic method using different precursors (Zn(NO3)2-6H2O; ZnSO4-7H2O; and Zn(CH3COO)2-2H2O) and sodium hydroxide as a nucleophilic agent. The resulting powders were calcined at 550 °C for 2 hours. Using the Williamson-Hall method for XRD analysis, the crystalline structure of the zinc oxide nanoparticles was determined, with average sizes of 40 nm (ZnO_AZ_US_MAE), 35.6 nm (ZnO_SU_US_MAE) and 36.4 nm (ZnO_AC_US_MAE). Morphological analysis by SEM revealed different shapes (polyhedral and irregular plates) with sizes ranging from 47 nm to 127 nm for the powder obtained from the zinc nitrate precursor, 43 nm to 63 nm for the powder prepared from the zinc sulfate precursor, and sizes ranging from 42 nm to 89 nm for the zinc acetate precursor. ATR FTIR spectroscopy was used to confirm the presence of Zn-O bonds. In addition, BET analysis showed that among the three Ipowders synthesized using different precursors, ZnO_SU_US_MAE had the highest surface area with a value of 16.4381 ± 0.0146 m²/g and an average particle size of 63.4671 nm, which was confirmed by SEM analysis.

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The impact of oxygen on Ga doped ZnO film

Abstract: The UPS results indicated that although the electron affinity of ZnO could be effectively tuned by doping Ga, it remained quite stable for GZO under oxygen rich condition.

Cited by 3 publications

References 29 publications

Tailoring of the Structural, Optical, and Electrical Characteristics of Sol-Gel-Derived Magnesium-Zinc-Oxide Wide-Bandgap Semiconductor Thin Films via Gallium Doping

Tailoring of the Structural, Optical, and Electrical Characteristics of Sol-Gel-Derived Magnesium-Zinc-Oxide Wide-Bandgap Semiconductor Thin Films via Gallium Doping

Tailoring Ga‐Doped ZnO Thin Film Properties for Enhanced Optoelectric Device Performance: Argon Flow Rate Modulation and Dynamic Sputtering Geometry Analysis

The Influence of Precursors on the Morpho-Structure of Zinc Oxide

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