The impact of post-polysilicon gate process on ultra-thin gate oxide integrity

Ang, C. H.; Ko, L.H.; Lin, Wenhe; Zheng, Jia-Zhen

doi:10.1016/s0038-1101(01)00295-7

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Fet Based On Cnts1

Devices Based On Graphene1

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Cited by 2 publications

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“…By adjusting the voltage on the gate, CNTs may switch from on to off. The electronics of CNTs could be developed largely based on the construction of FET, which has more practical application prospect [7] .…”

Section: Fet Based On Cntsmentioning

confidence: 99%

“…As a noval semiconducting material, graphene recently has been paid much attention. Andre Geim and Kostya Novoselov developed the world smallest transistor with only one atom thick and ten atoms width which was made of graphene [7] . Smaller graphene transistor was also developed with the size of one molecule in length and width, which was actually made up of single atom [8] .…”

Section: Devices Based On Graphenementioning

confidence: 99%

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