The Impact of Shallow-Trench-Isolation Mechanical Stress on the Hysteresis Effect of Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effects

Luo, Ji; Chen, Jing; Chai, Zhan; Lü, Kai; He, Wei; Yang, Yan; Wang, Xi

doi:10.1088/0256-307x/31/12/126601

Cited by 1 publication

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“…While no thinner crystalized β -Sb nanofilms can be obtained by a direct deposition process in our experiments. In the next, we proposed a controllable thermal desorption method [47][48][49] to get the thinner crystalized β -Sb nanofilms. At low coverages, most of the Sb nanofilms are amorphous or partially crystalized.…”

Section: -3mentioning

confidence: 99%

Epitaxial growth of antimony nanofilms on HOPG and thermal desorption to control the film thickness*

Xing¹,

Lei²,

Dong³

et al. 2020

Chinese Phys. B

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Group-V elemental nanofilms were predicted to exhibit interesting physical properties such as nontrivial topological properties due to their strong spin–orbit coupling, the quantum confinement, and surface effect. It was reported that the ultrathin Sb nanofilms can undergo a series of topological transitions as a function of the film thickness h: from a topological semimetal (h > 7.8 nm) to a topological insulator (7.8 nm > h > 2.7 nm), then a quantum spin Hall (QSH) phase (2.7 nm > h > 1.0 nm) and a topological trivial semiconductor (h > 1.0 nm). Here, we report a comprehensive investigation on the epitaxial growth of Sb nanofilms on highly oriented pyrolytic graphite (HOPG) substrate and the controllable thermal desorption to achieve their specific thickness. The morphology, thickness, atomic structure, and thermal-strain effect of the Sb nanofilms were characterized by a combination study of scanning electron microscopy (SEM), atomic force microscopy (AFM), and scanning tunneling microscopy (STM). The realization of Sb nanofilms with specific thickness paves the way for the further exploring their thickness-dependent topological phase transitions and exotic physical properties.

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Section: -3mentioning

confidence: 99%