The impact of substrate properties and thermal annealing on tantalum nitride thin films

Constrained sintering of alumina stripe patterns on rigid substrates: Effect of stripe geometry

“…Patterned films are the basis of many applications such as ceramic gas sensors [1] [2] [3] [4] Micro-ElectroMechanical Systems [5], and complex 3D microelectronic components based on the Low Temperature Cofired Ceramics (LTCC) technology. In practice, challenges arise from the co-sintering of these layered systems due to the geometrical constraint imposed by adjacent layers that densify at a different rate, or not at all in the case of rigid substrates.…”

Efecto De La Temperatura Del Sustrato en La Rugosidad E Índice De Refracción en El Visible E Infrarrojo Cercano De Películas Delgadas De Nitruro De Tantalio

“…De acuerdo a los resultados de espectroscopia por electrón Auger (AES), la composición química de la superficie de las películas de TaN depositadas, está conformada principalmente por tres tipos de elementos químicos, tantalio (Ta), nitrógeno (N) y oxígeno (O), habiéndose encontrado también en pequeñas concentraciones la presencia de argón (Ar) y carbono (C), tal como se muestra en la figura 9 del espectro Auger de la muestra depositada a 673 K. Se encontró que las capas depositadas en este caso contenían, tantalio en alto porcentaje (64.7 %), nitrógeno (27.6 %), oxígeno (5.8 %), carbono (1.2 %) y argón (0.7 %), proporciones reducidas en las dos últimas producto de la contaminación dentro de la cámara de vacío. La presencia de oxígeno independientemente del flujo de N 2 y las propiedades del sustrato usado [38], se debe al incremento de la temperatura, lo cual va a influir en el comportamiento del proceso de oxidación de las películas a través del tiempo.…”

Influence of substrate temperature and N2/Ar flow ratio on the stoichiometry, structure and hardness of TaNx coatings deposited by DC reactive sputtering

“…PVD reactive sputtering technique has been extensively employed for the synthesis of transition metal nitrides. Tantalum nitride thin films have been synthesized by magnetron sputtering using a Ta target in a N 2 /Ar gas mixture and different deposition parameters . So far, it is well known that for metal nitrides the deposition rate, chemical composition and crystalline structure of deposited films strongly depend on N 2 /Ar ratio and flow rate in the growth chamber as well as on the substrate temperature during deposition.…”

“…Tantalum nitride thin films have been synthesized by magnetron sputtering using a Ta target in a N 2 /Ar gas mixture and different deposition parameters. [4,9,10,[15][16][17][18][19][20] So far, it is well known that for metal nitrides the deposition rate, chemical composition and crystalline structure of deposited films strongly depend on N 2 /Ar ratio and flow rate in the growth chamber as well as on the substrate temperature during deposition. It is also known, that varying the substrate temperature induces changes in the crystalline structure of the deposited films.…”