The Impact of Substrates on the Performance of Top-Gate p-Ga203 Field-Effect Transistors: Record High Drain Current of 980 mA/mm on Diamond

Noh, Jinhyun; Si, Mengwei; Zhou, Hong; Tadjer, Marko J.; Ye, Peide D.

doi:10.1109/drc.2018.8442276

Cited by 17 publications

(22 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…On one hand, this relatively high TBC helps to explain why a Ga2O3 field-effect transistor observed record-high drain current on diamond. 14 The thermal conductivity of the Ga2O3 nano-membrane was measured as 8.4 1.0W/m-K, which is lower than the value of bulk Ga2O3 in this direction (about 13 W/m-K). 3 The thickness dependent thermal conductivity of Ga2O3 thin films from literature and this work are summarized in Figure 3.…”

Section: Resultsmentioning

confidence: 83%

“…On one hand, this relatively high TBC helps to explain why a Ga2O3 field-effect transistor observed record-high drain current on diamond. 14 On the other hand, it shows that thermal transport across Van der Waals interfaces are relatively good from a fundamental viewpoint. The thermal conductivity of the Ga2O3 nano-membrane was measured as 8.4 1.0W/m-K, which is lower than the value of bulk Ga2O3 in this direction (about 13 W/m-K).…”

Section: Resultsmentioning

confidence: 99%

“…[8][9][10][11][12][13] A record high drain current has been achieved in an exfoliated Ga2O3 field-effect transistor with diamond substrates. 14 This work demonstrates good device performance but has not quantified the heat transport across the Ga2O3-diamond interface as the Ga2O3 nano-membranes were adhered to diamond via Van der Waals forces. The TBC of mechanically joined materials could be as low as 0.1 MW/m 2 -K while the interfacial thermal conductance of transfer-printed metal films is in the range of 10-40 MW/m 2 -K. [15][16][17][18][19] Thermal transport across Van der Waals interfaces is limited by the real contact area and low phonon transmission due to weak adhesion energy even if there exists the possibility to achieve a high TBC.…”

Section: Introductionmentioning

confidence: 97%

See 2 more Smart Citations

Thermal conductance across β-Ga2O3-diamond van der Waals heterogeneous interfaces

et al. 2019

Self Cite

View full text Add to dashboard Cite

Because of its ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates grown from the melt, β-Ga2O3 has attracted great attention recently for potential applications of power electronics. However, its thermal conductivity is significantly lower than those of other wide bandgap semiconductors, such as AlN, SiC, GaN, and diamond. To ensure reliable operation with minimal self-heating at high power, proper thermal management is even more essential for Ga2O3 devices. Similarly to the past approaches aiming to alleviate selfheating in GaN high electron mobility transistors (HEMTs), a possible solution has been to integrate thin Ga2O3 membranes with diamond to fabricate Ga2O3-on-diamond lateral metalsemiconductor field-effect transistor (MESFET) or metal-oxide-semiconductor field-effect transistor (MOSFET) devices by taking advantage of the ultra-high thermal conductivity of diamond. Even though the thermal boundary conductance (TBC) between wide bandgap semiconductor devices such as GaN HEMTs and a diamond substrate is of primary importance for heat dissipation in these devices, fundamental understanding of the Ga2O3/diamond thermal interface is still missing. In this work, we study the thermal transport across the interfaces of Ga2O3 exfoliated onto a single crystal diamond. The Van der Waals bonded Ga2O3-diamond TBC is measured to be 17 -1.7/+2.0 MW/m 2 -K, which is comparable to the TBC of several physical-vapor-deposited metals on diamond. A Landauer approach is used to help understand phonon transport across perfect Ga2O3-diamond interface, which in turn sheds light on the possible TBC one could achieve with an optimized interface. A reduced thermal conductivity of the Ga2O3 nano-membrane is also observed due to additional phonon-membrane boundary scattering. The impact of the Ga2O3-substrate TBC and substrate thermal conductivity on the thermal performance of a power device are modeled and discussed. Without loss of generality, this study is not only important for Ga2O3 power electronics applications which would not be realistic without a thermal management solution, but also for the fundamental thermal science of heat transport across Van der Waals bonded interfaces.

show abstract

Section: Resultsmentioning

confidence: 83%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 97%

See 1 more Smart Citation

Thermal conductance across β-Ga2O3-diamond van der Waals heterogeneous interfaces

et al. 2019

Self Cite

View full text Add to dashboard Cite

show abstract

“…Diamond is also a current blocking substrate for transferred β-Ga 2 O 3 nanomembranes due to its wide bandgap of 5.47eV [21]. In this work, we not only demonstrate the record performance of top-gate β-Ga 2 O 3 FETs on a diamond substrate [22], [23], but also fully study the thermal properties of β-Ga 2 O 3 on a diamond substrate using high-resolution thermoreflectance (TR) imaging [24], [25], Raman thermography, and thermal simulations. Fig.…”

Section: Introductionmentioning

confidence: 99%

High Performance ${\beta}$ -Ga₂O₃ Nano-Membrane Field Effect Transistors on a High Thermal Conductivity Diamond Substrate

Noh

Alajlouni

Tadjer

et al. 2019

IEEE J. Electron Devices Soc.

Self Cite

View full text Add to dashboard Cite

To suppress severe self-heating under high power density, we herein demonstrate top-gate nano-membrane β-gallium oxide (β-Ga 2 O 3) field effect transistors on a high thermal conductivity diamond substrate. The devices exhibit enhanced performance, with a record high maximum drain current of 980 mA/mm for top-gate β-Ga 2 O 3 field effect transistors and 60% less temperature increase from reduced self-heating, compared to the device on a sapphire substrate operating under identical power density. With improved heat dissipation, β-Ga 2 O 3 field effect transistors on a diamond substrate are validated using an ultrafast high-resolution thermoreflectance imaging technique, Raman thermography, and thermal simulations. INDEX TERMS β-Ga 2 O 3 FET, diamond, nano-membrane, thermal conductivity, self-heating effect.

show abstract

“…Engineering the substrate of Ga 2 O 3 power devices is highly desired to assist in heat dissipation and address this SHE issue. Substrates such as sapphire [9], h-BN/sapphire [10], SiC [11], and diamond [12] have been proposed to help the heat dissipation in the Ga 2 O 3 power metal-oxide-semiconductor field-effect transistors (MOSFETs). However, the κ value for sapphire is only 0.4 W/(cm•K), which is still low and could not satisfactorily solve the heat dissipation problem.…”

Section: Introductionmentioning

confidence: 99%

High Performance Ga₂O₃ Metal-Oxide-Semiconductor Field-Effect Transistors on an AlN/Si Substrate

Lei

Han

et al. 2019

IEEE J. Electron Devices Soc.

View full text Add to dashboard Cite

We propose and demonstrate Ga 2 O 3 metal-oxide-semiconductor field-effect transistors (MOSFETs) on a high thermal conductivity AlN/Si substrate to improve the heat dissipation capability and keep their cost-effectiveness. Owing to the optimized source/drain contact and Al 2 O 3 /Ga 2 O 3 interface, a drain current of 580 mA/mm and peak intrinsic transconductance G m,int of 35.5 mS/mm were achieved, which are among the highest for all the reported top-gate Ga 2 O 3 MOSFETs. A peak mobility of 82.9 cm 2 /V•s, a high saturation velocity v sat of 1.1 × 10 7 cm/s, and a low interface trap density of 1.1 × 10 12 cm −2 eV −1 are also obtained. Pulse measurement reveals the good heat dissipation capability of the AlN/Si substrate. A three terminal off-state breakdown voltage V br of 118 V, a small specific on resistance R on,sp of 1.44 m •cm 2 , and power figure-of-merit of 9.7 MW/cm 2 are achieved in a device with L GD of 1.14 μm. These excellent results indicate the great potential of Ga 2 O 3 MOSFETs on AlN/Si substrate for future power electronics applications. INDEX TERMS Ga 2 O 3 , MOSFETs, AlN/Si, self-heating effect.

show abstract

The Impact of Substrates on the Performance of Top-Gate p-Ga203 Field-Effect Transistors: Record High Drain Current of 980 mA/mm on Diamond

Cited by 17 publications

References 9 publications

Thermal conductance across β-Ga2O3-diamond van der Waals heterogeneous interfaces

Thermal conductance across β-Ga2O3-diamond van der Waals heterogeneous interfaces

High Performance ${\beta}$ -Ga₂O₃ Nano-Membrane Field Effect Transistors on a High Thermal Conductivity Diamond Substrate

High Performance Ga₂O₃ Metal-Oxide-Semiconductor Field-Effect Transistors on an AlN/Si Substrate

Contact Info

Product

Resources

About

The Impact of Substrates on the Performance of Top-Gate p-Ga203 Field-Effect Transistors: Record High Drain Current of 980 mA/mm on Diamond

Cited by 17 publications

References 9 publications

Thermal conductance across β-Ga2O3-diamond van der Waals heterogeneous interfaces

Thermal conductance across β-Ga2O3-diamond van der Waals heterogeneous interfaces

High Performance ${\beta}$ -Ga2O3 Nano-Membrane Field Effect Transistors on a High Thermal Conductivity Diamond Substrate

High Performance Ga2O3 Metal-Oxide-Semiconductor Field-Effect Transistors on an AlN/Si Substrate

Contact Info

Product

Resources

About

High Performance ${\beta}$ -Ga₂O₃ Nano-Membrane Field Effect Transistors on a High Thermal Conductivity Diamond Substrate

High Performance Ga₂O₃ Metal-Oxide-Semiconductor Field-Effect Transistors on an AlN/Si Substrate