The impact of surface composition on the interfacial energetics and photoelectrochemical properties of BiVO4

Lee, Dongho; Wang, Wennie; Zhou, Chenyu; Tong, Xiao; Liu, Mingzhao; Galli, Giulia; Choi, Kyoung‐Shin

doi:10.1038/s41560-021-00777-x

Cited by 142 publications

(136 citation statements)

References 42 publications

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“…With the deposition of Fh, the Fh/WO 3 achieves a maximum photocurrent density of 0.61 mA/cm 2 at 1.23 V (vs. RHE) when the deposition time is 30 min, which is 1.79 times higher than the WO 3 (0.34 mA/cm 2 ). The PEC performance of the obtained Fh/WO 3 is comparable to the previous reports of WO 3 based composites [33,34]. The transient photocurrent density versus time (I-T) curves of corresponding photoanodes were measured at 1.6 V (vs. RHE) and the results are presented in Fig.…”

Section: Photoelectrochemical Properties Of the Fabricated Photoanodessupporting

confidence: 85%

“…Exploring a suitable semiconductor as the photoelectrode is crucial. Many semiconductors have been systematically investigated over these years, like BiVO 4 [3,4], WO 3 [5,6], Fe 2 O 3 [7,8], g-C 3 N 4 [9], TiO 2 [10], Ta 3 N 5 [11,12], etc. Among these materials, WO 3 has promising application prospect due to its earth abundance, low toxicity, suitable band position, etc.…”

Section: Introductionmentioning

confidence: 99%

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Enhanced Photoelectrochemical Water Oxidation with Ferrihydrite Decorated WO3

et al. 2021

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The WO 3 is a promising photoanode material for photoelectrochemical (PEC) water oxidation. Loading co-catalysts is an effective strategy for favoring the charge transfer and light harvesting of WO 3 , which can in turn improve its PEC performance. Herein, the ferrihydrite (Fh), a kind of poorly crystalline iron oxide material, was loaded on the WO 3 photoanode through a two-step hydrothermal synthesis. The obtained Fh/WO 3 photoanode exhibited a remarkable photocurrent density of 0.6 mA/cm 2 at 1.23 V (vs. RHE), which was 1.79 times higher than the bare WO 3 . For the Fh/WO 3 photoanode, the bulk charge separation efficiency is 45.6% and the photoconversion efficiency is 0.066%, which are both higher than the bare WO 3 . The decorated Fh can form an additional interface between the WO 3 and the electrolyte, which decreases the impedance and favors the charge transfer. Moreover, the Fh can function as a hole storage layer, which can temporarily store the photogenerated holes and induce the longer lifetime of charge carriers, thus improving the charge separation and water oxidation reaction kinetics.

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Section: Photoelectrochemical Properties Of the Fabricated Photoanodessupporting

confidence: 85%

Section: Introductionmentioning

confidence: 99%

Enhanced Photoelectrochemical Water Oxidation with Ferrihydrite Decorated WO3

et al. 2021

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“…The comparison of the X-ray diffraction (XRD) patterns of BiVO 4 and Bi 1-x VO 4 shows a decrease in the intensity and an obvious shift of diffraction peaks towards lower 2θ angle in the presence of Bi vac (Figure 1c), which is similar to V 5+ dissolution of BiVO 4 . [24,25] In sharp contrast to XRD results, the Raman shift of Bi 1−x VO 4 shows negligible changes compared to that of BiVO 4 , presumably, due to all Raman peaks being associated with stretch or vibration of VO bonds only (Figure S9, Supporting Information). To further confirm the formation of Bi vac , positron annihilation spectroscopy (PAS) of BiVO 4 and Bi 1−x VO 4 were compared.…”

Section: Resultsmentioning

confidence: 73%

Boosting Charge Transport in BiVO₄ Photoanode for Solar Water Oxidation

et al. 2022

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The ability to regulate charge separation is pivotal for obtaining high efficiency of any photoelectrode used for solar fuel production. Vacancy engineering for metal oxide semiconductor photoelectrode is a major strategy but has faced a formidable challenge in bulk charge transport because of the elusive charge self‐trapping site. In this work, a new deep eutectic solvent to engineer bismuth vacancies (Bivac) of BiVO4 photoanode is reported; the novel Bivac can remarkably increase the charge diffusion coefficient by 5.8 times (from 1.82 × 10−7 to 1.06 × 10−6 cm2 s−1), which boosts the charge transport efficiency. Through further loading CoBi cocatalyst to enhance charge transfer efficiency, the photocurrent density of BiVO4 photoanode with optimal Bivac concentration reaches 4.5 mA cm−2 at 1.23 V vs reversible hydrogen electrode under AM 1.5 G illumination, which is higher than that of previously reported Ovac engineered BiVO4 photoanode where the BiVO4 photoanode is synthesized by a similar procedure. This work perfects a cation defect engineering that enables the potential capability to equate the charge transport properties in different types of semiconductor materials for solar fuel conversion.

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“…There is a tail absorption at the wavelength above the band edge of 500 nm, implying the presence of surface defects. [ 1 ] It has to be mentioned that the quality of the BiVO 4 electrodes mainly affects the chemical and stability owing to the dissolution of V. [ 37 ] Even though the relatively low crystalline of BiVO 4 is caused by the thermal treatment in this work, it does not influence the assessment for PEC activity and stability.…”

Section: Resultsmentioning

confidence: 99%

Pt‐Induced Defects Curing on BiVO₄ Photoanodes for Near‐Threshold Charge Separation

Gao

Liu

Guo

et al. 2021

Advanced Energy Materials

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Photostability is one of the most essential properties for evaluating photoelectrochemical (PEC) water splitting performance on semiconductors. Herein, the oxygen‐deficiency conditions are applied to tune and activate BiVO4 photoanodes with a class of oxygen vacancies across the whole bulk material, and regulate the electronic occupancy of these states upon the charge carrier processes that determine PEC water oxidation activity. Through the experimental results and nonadiabatic molecular dynamics with time‐domain density functional theory calculations, the charge carrier lifetime can be influenced by the oxygen vacancies concentration on BiVO4, and the semiconductor can be flexibly photoactivated under oxygen‐sufficient and deficient atmospheres for enhancing the charge carrier density and photovoltage. The PEC performance of BiVO4 is further boosted by Pt doping, which exhibits a record photocurrent density of 5.45 mA cm–2 at 1.23 VRHE with solar conversion efficiency of 2.1% at 0.65 VRHE. The Pt can prevent the unnecessory charge recombination on the defected BiVO4, which also enhances the majority charge carrier density, resulting in one of the best charge separation efficiencies, close to 100%, among the steady‐state PEC performance for BiVO4. More importantly, the resulting Pt:BiVO4 presents long‐term stability over 50 h at 0.8 VRHE.

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The impact of surface composition on the interfacial energetics and photoelectrochemical properties of BiVO4

Cited by 142 publications

References 42 publications

Enhanced Photoelectrochemical Water Oxidation with Ferrihydrite Decorated WO3

Enhanced Photoelectrochemical Water Oxidation with Ferrihydrite Decorated WO3

Boosting Charge Transport in BiVO₄ Photoanode for Solar Water Oxidation

Pt‐Induced Defects Curing on BiVO₄ Photoanodes for Near‐Threshold Charge Separation

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The impact of surface composition on the interfacial energetics and photoelectrochemical properties of BiVO4

Cited by 142 publications

References 42 publications

Enhanced Photoelectrochemical Water Oxidation with Ferrihydrite Decorated WO3

Enhanced Photoelectrochemical Water Oxidation with Ferrihydrite Decorated WO3

Boosting Charge Transport in BiVO4 Photoanode for Solar Water Oxidation

Pt‐Induced Defects Curing on BiVO4 Photoanodes for Near‐Threshold Charge Separation

Contact Info

Product

Resources

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Boosting Charge Transport in BiVO₄ Photoanode for Solar Water Oxidation

Pt‐Induced Defects Curing on BiVO₄ Photoanodes for Near‐Threshold Charge Separation