The impact on device characteristics with STI formed by spin-on dielectric in high density NAND flash memory

Wong, Wei-Zhe; Fan, Jhen-Jhih; Jiang, Jianwei; Huang, Chen-Hao; Chen, C. Y.; Chen, H. H.; Hsu, Cheng-Yuan; Young, R.B.; Wang, P. Y.; Fujita, Hiroharu; Kobayashi, Hidetomo

doi:10.1109/vtsa.2009.5159268

Cited by 2 publications

(2 citation statements)

References 3 publications

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“…Several methods such as high density plasma and thermal chemical vapor deposition have been widely used in shallow trench isolation (STI) for NAND flash memory. As the memory device is scaled down to the 28 nm node and beyond, these methods exhibit poor gap-fill performance [1]. To overcome this problem, perhydropolysilazane-based inorganic spin-on dielectric (PSZ-SOD) film has been adopted due to its excellent gap-fill ability.…”

Section: Introductionmentioning

confidence: 99%

Superior PSZ‐SOD Gap‐Fill Process Integration Using Ultra‐Low Dispensation Amount in STI for 28 nm NAND Flash Memory and Beyond

Lai

Chien

et al. 2015

Journal of Nanomaterials

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The gap-fill performance and process of perhydropolysilazane-based inorganic spin-on dielectric (PSZ-SOD) film in shallow trench isolation (STI) with the ultra-low dispensation amount of PSZ-SOD solution have been investigated in this study. A PSZ-SOD film process includes liner deposition, PSZ-SOD coating, and furnace curing. For liner deposition, hydrophilic property is required to improve the contact angle and gap-fill capability of PSZ-SOD coating. Prior to PSZ-SOD coating, the additional treatment on liner surface is beneficial for the fluidity of PSZ-SOD solution. The superior film thickness uniformity and gap-fill performance of PSZ-SOD film are achieved due to the improved fluidity of PSZ-SOD solution. Following that up, the low dispensation rate of PSZ-SOD solution leads to more PSZ-SOD filling in the trenches. After PSZ-SOD coating, high thermal curing process efficiently promotes PSZ-SOD film conversion into silicon oxide. Adequate conversion from PSZ-SOD into silicon oxide further increases the etching resistance inside the trenches. Integrating the above sequence of optimized factors, void-free gap-fill and well-controlled STI recess uniformity are achieved even when the PSZ-SOD solution dispensation volume is reduced 3 to 6 times compared with conventional condition for the 28 nm node NAND flash and beyond.

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Section: Introductionmentioning

confidence: 99%

Superior PSZ‐SOD Gap‐Fill Process Integration Using Ultra‐Low Dispensation Amount in STI for 28 nm NAND Flash Memory and Beyond

Lai

Chien

et al. 2015

Journal of Nanomaterials

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“…1,2) Among the various deposition methods available, such as chemical vapor deposition, high-density plasma (HDP) deposition, and spin-onglass (SOG) method, [3][4][5] the SOG method has been considered to be an effective method to fill high-AR structures, because it enable low-cost fabrication and it has greater amenability to such structures. [6][7][8][9] However, the SOG method requires high temperatures (>600 °C) that can lead to degradation (i.e., oxidation) of adjoining active regions, and additional processes to restore these regions are necessary. 10,11) In this study, in order to overcome the limitations of the conventional SOG method, we propose a low-temperature SOG method that involves high-pressure annealing.…”

mentioning

confidence: 99%

Low-temperature spin-on-glass method involving high-pressure annealing for filling high-aspect-ratio structures

Lee

Woo

Park

et al. 2014

Jpn. J. Appl. Phys.

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As semiconductor devices are being increasingly scaled down, complex and high-aspect-ratio (AR) structures become necessary. The spin-on-glass (SOG) method has been considered to be effective for filling high-AR (>50) structures, because it enables low-cost fabrication and it has greater amenability to such structures. However, this method requires high temperatures (>600 °C) that can lead to degradation (i.e., oxidation) of adjoining active regions, and additional processes to restore these regions are necessary. We propose a low process temperature (∼400 °C) SOG method involving high-pressure annealing, for the filling of high-AR structures without the creation of voids.

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The impact on device characteristics with STI formed by spin-on dielectric in high density NAND flash memory

Cited by 2 publications

References 3 publications

Superior PSZ‐SOD Gap‐Fill Process Integration Using Ultra‐Low Dispensation Amount in STI for 28 nm NAND Flash Memory and Beyond

Superior PSZ‐SOD Gap‐Fill Process Integration Using Ultra‐Low Dispensation Amount in STI for 28 nm NAND Flash Memory and Beyond

Low-temperature spin-on-glass method involving high-pressure annealing for filling high-aspect-ratio structures

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