The impact on mc-Si ingot grown in a directional solidification furnace by partially replacing the susceptor bottom with an insulation material: A numerical investigation

Keerthivasan, T.; Liu, Xin; Srinivasan, M.; Usami, Noritaka; Anbu, G.; Aravindan, G.; Ramasamy, P.

doi:10.1016/j.jcrysgro.2023.127130

Cited by 4 publications

(2 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The quality of mc-Si ingots has been enhanced by keerthivasan et al through modifications made to the furnace geometry. [7][8][9] Extensive research has been conducted by Sugunraj et al to investigate the grain structure and impurity concentrations within mc-Si [10] and by Madhesh et al to investigate the temperature control and carbon oxygen concentration within mc-Si. [11] The saw damage removal, surface cleaning, polishing, and texturing of silicon wafer surfaces, as well as the recycling of silicon materials, are all obtained by wet-chemical etching processing.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Influence of Temperature on Acid‐Based Wet Chemical Texturization for Ultralow Optical Reflectance (<2%) of mc‐Si Wafer for PV Applications

Madhesh,

Muthukumar,

Srinivasan

et al. 2023

Cryst. Res. Technol.

View full text Add to dashboard Cite

This study proposes a method to enhance the efficiency and optical properties of silicon solar cells made from as‐cut boron‐doped p‐type multicrystalline silicon (mi‐Si) wafers through acid‐based chemical texturization. Achieving lower reflectance is crucial for improving solar cell efficiency, and this can be attained through optimized chemical etching. The research demonstrates achieving a reflectance below 2% on the wafer surface after optimal chemical etching. Wet chemical etching is employed as the surface treatment method, using the same chemical etchant with varying conditions for the texturing process. The study compares temperature‐maintained chemical etching and without temperature maintenance. The chemicals used include HF + HNO3 + CH3COOH at temperatures of 50 °C and room temperature, with etching durations of 2, 5, 10, and 15 minutes, respectively. The as‐cut boron‐doped p‐type mc‐Si wafer grains are analyzed using UV‐vis spectroscopy, optical microscopy, Fourier transform infrared spectroscopy, thickness profilometry, scanning electron microscopy, and X‐ray diffraction spectroscopy, both before and after etching. Among the different conditions tested, the chemical etchant HF + HNO3 + CH3COOH at 50 °C for a 5‐minute etching duration yields favorable results, with reflectivity below 2%. The orientation of mc‐silicon wafer grains is determined using X‐ray diffraction spectroscopy.

show abstract

Section: Introductionmentioning

confidence: 99%

“…through modifications made to the furnace geometry. [ 7–9 ] Extensive research has been conducted by Sugunraj et al. to investigate the grain structure and impurity concentrations within mc‐Si [ 10 ] and by Madhesh et al.…”

Section: Introductionmentioning

confidence: 99%

Influence of Temperature on Acid‐Based Wet Chemical Texturization for Ultralow Optical Reflectance (<2%) of mc‐Si Wafer for PV Applications

Madhesh,

Muthukumar,

Srinivasan

et al. 2023

Cryst. Res. Technol.

View full text Add to dashboard Cite

show abstract

Control of the Thermal Field of S/L Interface Front and Crystal Growth of Mono-Like Crystalline Silicon Assisted by Direct Current

Yuan,

Hu,

et al. 2023

Silicon

View full text Add to dashboard Cite

Optimization of Process Parameters for Silicon Casting Manufacturing Using Fully Transient 3D Modeling Approach

Dezfoli

2024

Silicon

View full text Add to dashboard Cite

The impact on mc-Si ingot grown in a directional solidification furnace by partially replacing the susceptor bottom with an insulation material: A numerical investigation

Cited by 4 publications

References 26 publications

Influence of Temperature on Acid‐Based Wet Chemical Texturization for Ultralow Optical Reflectance (<2%) of mc‐Si Wafer for PV Applications

Influence of Temperature on Acid‐Based Wet Chemical Texturization for Ultralow Optical Reflectance (<2%) of mc‐Si Wafer for PV Applications

Control of the Thermal Field of S/L Interface Front and Crystal Growth of Mono-Like Crystalline Silicon Assisted by Direct Current

Optimization of Process Parameters for Silicon Casting Manufacturing Using Fully Transient 3D Modeling Approach

Contact Info

Product

Resources

About