JEM
 1992
DOI: 10.1007/bf02655620
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The implementation of the power law model in silicon oxidation process simulation

Zhi-Min Ling
1
,
L. Dupas
2
,
K.M. De Meyer
3
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Cited by 2 publications
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References 11 publications
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Oxidation and Gate Dielectrics

Cleavelin1,
Colombo2,
Niimi3
et al. 2007
Handbook of Semiconductor Manufacturing Technology, Second Edition
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Oxidation and Gate Dielectrics

Cleavelin1,
Colombo2,
Niimi3
et al. 2007
Handbook of Semiconductor Manufacturing Technology, Second Edition
2
0
0
0
View full textAdd to dashboardCite

Influence of RTP on Vacancy Concentrations

Jacob
1
,
Pichler
2
,
Wohs
3
et al. 1997
MRS Proc.
3
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