The implementation of thermal and UV nanoimprint lithography for selective area epitaxy

Abstract

Semiconductor nanowires in horizontal configuration could provide a path for scalable nanowire-based devices. Bottom-up large-scale manufacturing of these nanostructures by selective area epitaxy (SAE) relies on precise nanopatterning of various shapes on the growth masks. Electron beam lithography offers an extraordinary accuracy suited for the purpose. However, this technique is not economically viable for large production as it has a low throughput and requires high investment and operational costs. Nanoimprint lithography (NIL) has the potential to reduce fabrication time and costs significantly while requiring less sophisticated equipment. In this work, we utilize both thermal and UV NIL for patterning substrates for SAE, elucidating the advantages and disadvantages of each lithography technique. We demonstrate the epitaxial growth of Ge and GaAs NWs on these substrates, where we observe high-quality mono-crystalline structures. Even though both processes can produce small uniform structures suitable for SAE, our results show that UV NIL proves to be superior and enables reliable and efficient patterning of sub-100 nm mask features at the wafer scale.

Control of Ge island coalescence for the formation of nanowires on silicon

“…Secondly, the design flexibility of the SAE approach enables the integration of nanoscale devices of varying size and complexity at a wafer scale. 15,16 Finally, the small interface area between the grown semiconductor and the host substrate limits the formation of interface-related defects, enabling the integration of lattice-mismatched materials. 17,18 Because of these convenient properties, the SAE approach has been the subject of rapidly increasing interest in the area of electronic and quantum computing applications.…”

Perfect Tracking Control of Linear Sliders Using Sliding Mode Control with Uncertainty Estimation Mechanism

“…Since semiconductor devices are the foundation of these devices, it is expected that semiconductor device manufacturing technology will become increasingly important. Therefore, various studies have been conducted in different fields to meet the manufacturing requirements of semiconductor devices [1][2][3][4][5][6][7].…”

Nanoimprint Lithography for Next-Generation Carbon Nanotube-Based Devices

“…Nano-scale carbon pillars with controlled diameters, down to 25 nm, and protruded lengths of 100 nm were successfully used as a master-mold for UV-NIL [ 32 ]. Nanoimprint lithography (NIL) [ 33 , 34 , 35 , 36 , 37 ] is a versatile nanofabrication technique that can pattern nanoscale features with high fidelity resolution on a variety of substrates in combination with thin-film deposition processes [ 38 , 39 , 40 , 41 , 42 ]. Thus, it is a viable processing method to incorporate catalyst for the growth of CNTs with a high aspect ratio.…”