The importance of strain on spin-spin coupling in Pr5/8Ca3/8MnO3 single crystal film

Abstract

The influence of anisotropic strains on coupling spins is systematically investigated in pulsed laser deposited single crystal Pr5/8Ca3/8MnO3 film. The substrate was chosen to introduce tensile and compressive strain onto the film. Various experiments, i.e., zero field cooled/field cooled (ZFC/FC) magnetization measurement, hysteresis loops, and exchange bias field detection, have revealed distinct difference along two perpendicular in-plane axes which represent tensile and compressive strain orientation, respectively. We found that the observed phenomenon can be explained by the external strain effect.

Colossal anisotropic resistivity and oriented magnetic domains in strained La0.325Pr0.3Ca0.375MnO3 films

“…8,9 In recent years, the anisotropic resistivity (AR), i.e., the dependence of resistivity on the current directions with respect to the crystal axes, which is an appealing route to probe microscopic ordering phases self-organized in the manganite system, 1 has drawn a wide range of attentions. 6,7,[10][11][12] Particularly, through appropriate choice of single crystal substrates, the AR of manganite thin films can be manipulated by misfit lattice strain from the underlying substrates obviously. [10][11][12] A possible origin for this effect is the anisotropic strain controlled orbital-ordered state that leads to anisotropic orbital hopping amplitudes and the anisotropic electronic transport, 13,14 which could be effectively manipulated via magnetic field (H), doping, or the anisotropic strain relaxation process.…”

“…6,7,[10][11][12] Particularly, through appropriate choice of single crystal substrates, the AR of manganite thin films can be manipulated by misfit lattice strain from the underlying substrates obviously. [10][11][12] A possible origin for this effect is the anisotropic strain controlled orbital-ordered state that leads to anisotropic orbital hopping amplitudes and the anisotropic electronic transport, 13,14 which could be effectively manipulated via magnetic field (H), doping, or the anisotropic strain relaxation process. In addition, the phase separation (PS), which is characterized by the coexistence of the ferromagnetic-metal (FMM) and antiferromagnetic-insulator (AFI), or charge-ordering insulator phases, was also demonstrated to be of particular importance to AR.…”