The improved properties of solution-based InGaSnO (IGTO) thin film transistor using the modification of InZnO (IZO) layer

Zhang, Shuo; Weng, Le; Liu, Bin; Kuang, Dan; Liu, Xianwen; Jiang, Baiqi; Zhang, Guangchen; Bao, Zongchi; Yuan, Guangcai; Guo, Jingjie; Ning, Ce; Shi, Dinghua; Yu, Zhinong

doi:10.1016/j.vacuum.2023.112225

Cited by 11 publications

(3 citation statements)

References 44 publications

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“…Therefore, it is usually difficult to realize high mobility together with a low threshold voltage ( V th ) and good stability for amorphous oxide TFTs. A dual active layer (DAL) comprising heterogeneous materials has been raised as a solution to this problem [ 8 , 9 , 10 , 11 , 12 ]. However, it is complicated to deposit two different materials to form the DAL and it is difficult to control the heterointerface that has a significant influence on the electrical performance of the TFTs.…”

Section: Introductionmentioning

confidence: 99%

The Enhanced Performance of Oxide Thin-Film Transistors Fabricated by a Two-Step Deposition Pressure Process

Zhao,

Yan,

Wang

et al. 2024

Nanomaterials

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It is usually difficult to realize high mobility together with a low threshold voltage and good stability for amorphous oxide thin-film transistors (TFTs). In addition, a low fabrication temperature is preferred in terms of enhancing compatibility with the back end of line of the device. In this study, α-IGZO TFTs were prepared by high-power impulse magnetron sputtering (HiPIMS) at room temperature. The channel was prepared under a two-step deposition pressure process to modulate its electrical properties. X-ray photoelectron spectra revealed that the front-channel has a lower Ga content and a higher oxygen vacancy concentration than the back-channel. This process has the advantage of balancing high mobility and a low threshold voltage of the TFT when compared with a conventional homogeneous channel. It also has a simpler fabrication process than that of a dual active layer comprising heterogeneous materials. The HiPIMS process has the advantage of being a low temperature process for oxide TFTs.

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Section: Introductionmentioning

confidence: 99%

The Enhanced Performance of Oxide Thin-Film Transistors Fabricated by a Two-Step Deposition Pressure Process

Zhao,

Yan,

Wang

et al. 2024

Nanomaterials

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“…Solution processes offer additional benefits compared to vacuum-based techniques: simplicity, low cost, high throughput, and the ability to fabricate various combinations [22]. Moreover, for future widespread application in flexible devices, amorphous dielectric films have good mechanical flexibility, smooth surface, and better uniformity with lower leakage current density than crystalline materials [23][24][25]. In addition, the temperature during amorphous preparation is relatively low, thus reducing the diffusion of elements in multilayer devices, but the subsequent annealing temperature is still high compared to the widely used flexible substrates such as polyimide [15][16][17][18][19][20][21][22][23][24][25][26][27][28][29].…”

Section: Introduction and Formatting Guidelines Partmentioning

confidence: 99%

“…Moreover, for future widespread application in flexible devices, amorphous dielectric films have good mechanical flexibility, smooth surface, and better uniformity with lower leakage current density than crystalline materials [23][24][25]. In addition, the temperature during amorphous preparation is relatively low, thus reducing the diffusion of elements in multilayer devices, but the subsequent annealing temperature is still high compared to the widely used flexible substrates such as polyimide [15][16][17][18][19][20][21][22][23][24][25][26][27][28][29]. Park et al prepared ZrO2 dielectric materials from zirconium acetylacetonate to reduce the processing temperature using the UV annealing method [30].…”

Section: Introduction and Formatting Guidelines Partmentioning

confidence: 99%

P‐10.8: Impact of Surface Treatments on High‐k Zirconium Aluminum Oxide Dielectric without Annealing

Liu,

Zhang,

2024

Symp Digest of Tech Papers

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Amorphous high‐k zirconium aluminum oxide (ZAO) dielectrics are prepared without the post‐annealing process to achieve high performance and low cost of next‐generation flexible optoelectronic devices. In this study, the ZAO film without annealing was prepared by co‐treatment with ultraviolet and hydrogen peroxide solution (UV‐H2O2‐UV). The performance of the film was improved by H2O2 dissociating hydroxyl radicals and combining with oxygen vacancy in the treatment process. The results show that, compared with the sample annealed at 380℃, the oxygen vacancy in the film is reduced from 29.55% to 25.23% after UV‐H2O2‐UV treatment for 60 min. When the relative permittivity increases from 11.45 to 13.99, the leakage current density at 1 MV/cm decreases from 6.45×10‐7 to 2.86×10‐8 A/cm2, and the breakdown voltage increases by 108%. This work aims to provide widely applicable and repeatable methods to open the door to in‐depth research on alternative high‐temperature post‐annealing processes for high‐performance flexible electronic devices.

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Approaches to Improve Mobility and Stability of IGZO TFTs: A Brief Review

Pan,

Hu,

Chen

et al. 2024

Trans. Electr. Electron. Mater.

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The improved properties of solution-based InGaSnO (IGTO) thin film transistor using the modification of InZnO (IZO) layer

Cited by 11 publications

References 44 publications

The Enhanced Performance of Oxide Thin-Film Transistors Fabricated by a Two-Step Deposition Pressure Process

The Enhanced Performance of Oxide Thin-Film Transistors Fabricated by a Two-Step Deposition Pressure Process

P‐10.8: Impact of Surface Treatments on High‐k Zirconium Aluminum Oxide Dielectric without Annealing

Approaches to Improve Mobility and Stability of IGZO TFTs: A Brief Review

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