The Improvement of DC Performance in AlGaN–GaN HEFTs With Isoelectronic Al-Doped Channels

Jeon, Changwoo; Lee, Jae‐Hoon; Lee, Jung‐Hee; Lee, Jong‐Lam

doi:10.1109/led.2004.824246

Cited by 14 publications

(13 citation statements)

References 12 publications

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“…Much attempts have been devoted to grow up ultrathin films on GaN substrates. [1][2][3] AlGaN have been under intense investigation owing to its potential in constructing AlGaN/GaN heterostructure devices, [4][5][6][7] such as ultraviolet (UV) light high-temperature/power electronic devices. 5,6 To study the effect of Al doping concentration, there are many reports that Al x Ga 1Àx N/GaN heterostructure grown on sapphire substrate has exhibited excellent device performances, which greatly decreases with Al incorporation.…”

Section: Introductionmentioning

confidence: 99%

“…5,6 To study the effect of Al doping concentration, there are many reports that Al x Ga 1Àx N/GaN heterostructure grown on sapphire substrate has exhibited excellent device performances, which greatly decreases with Al incorporation. [7][8][9][10] In addition, some group attempt to explain relevant experimental phenomenon and explore basic properties by theoretical study recently. It was found that absorption peak moved to high energy level and the gap of band structure enlarged with the increase of Al impurity in GaN-bulk.…”

Section: Introductionmentioning

confidence: 99%

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Behavior of aluminum adsorption and incorporation at GaN(0001) surface: First-principles study

Qin

Xiong

Wan

2013

Journal of Applied Physics

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First-principles calculations are performed to study the energetics and atomic structures of aluminum adsorption and incorporation at clean and Ga-bilayer GaN(0001) surfaces. We find the favorable adsorption site changes from T4 to T1 as Al coverage increased to 1 monolayer on the clean GaN(0001) surface, and a two-dimensional hexagonal structure of Al overlayer appears. It is interesting the Al atoms both prefer to concentrate in one deeper Ga layer of clean and Ga-bilayer GaN(0001) surface, respectively, while different structures could be achieved in above surfaces. For the case of clean GaN(0001) surface, corresponding to N-rich and moderately Ga-rich conditions, a highly regular superlattice structure composed of wurtzite GaN and AlN becomes favorable. For the case of Ga-bilayer GaN(0001) surface, corresponding to extremely Ga-rich conditions, the Ga bilayer is found to be sustained stable in Al incorporating process, leading to an incommensurate structure directly. Furthermore, our calculations provide an explanation for the spontaneous formation of ordered structure and incommensurate structure observed in growing AlGaN films. The calculated results are attractive for further development of growth techniques and excellent AlGaN/GaN heterostructure electronic devices. V

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Behavior of aluminum adsorption and incorporation at GaN(0001) surface: First-principles study

Qin

Xiong

Wan

2013

Journal of Applied Physics

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“…AlGaN/GaN high‐electron‐mobility transistors (HEMTs) are a promising candidate for the next generation of high‐frequency 1, 2 and electrical power device applications 3 owing to the wide band‐gap semiconductor properties of GaN. Several attempts to use AlGaN as a channel material instead of GaN, by taking advantage of the wider band‐gap semiconductor properties of AlGaN, have been reported 4–10. By employing AlGaN as the channel layer, advantages such as the enhancement of the breakdown voltage and stable operation at high temperature can be expected.…”

Section: Introductionmentioning

confidence: 99%

Enhancement of two‐dimensional electron gases in AlGaN‐channel high‐electron‐mobility transistors with AlN barrier layers

Hashimoto

Akita

Yamamoto

et al. 2012

Physica Status Solidi (a)

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We have demonstrated a high sheet carrier concentration in AlGaN-channel high-electron-mobility transistors (HEMTs) with AlN barrier layer. We investigate the epitaxial structure of these HEMTs by X-ray diffraction and reveal that the partial lattice relaxation occurs in the Al 0.51 GaN-channel layers on the AlN buffer layers, and that the AlN barrier layer was coherently grown on the AlGaN channel layer. The sheet carrier concentration due to two-dimensional electron gases of the AlN/Al 0.51 GaN HEMT is 2.8 Â 10 13 cm À2 , which is enhanced owing to the use of AlN as the barrier layer. This value of the sheet carrier concentration agrees with the calculated value based on the model of partial lattice relaxation in AlGaN channel layer.

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“…14 Doping of Al atoms into the GaN channel layer of a conventional Al x Ga 1−x N / GaN heterostructure grown on sapphire substrate exhibited excellent device performances with high mobility, large transconductance, high current capability, and high power density, which are attributable to the fact that the electron scattering centers in GaN channel layer greatly decreases with the Al incorporation. 15,16 Recently, Hikosaka et al 17 studied the Al doping in GaN grown on ͑001͒ Si substrate. They also found that a small amount of Al atoms in the GaN film improves the crystalline and optical properties of the material.…”

Section: Introductionmentioning

confidence: 99%

Enhanced performance of GaN-based light emitting diode with isoelectronic Al doping layer

Lee

2009

Journal of Applied Physics

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The effects of isoelectronic Al doping into epitaxial GaN films grown by metal organic chemical vapor deposition on sapphire substrates were investigated. It was found, based on the measured electron mobility and x-ray analysis, that there is a limiting point of the incorporation of Al into GaN in improving the crystal quality. The electron mobility of the undoped GaN film was 178 cm2/V s and the value greatly increased to 524 cm2/V s by doping a small amount of Al (up to 0.45% in concentration) into the GaN layer. A further increase in the Al concentration resulted in a degradation of the electron mobility, which decreased to 138 cm2/V s when the Al concentration was 0.82%. The output power of a side view light emitting diode (LED) with the Al-doped GaN layer was estimated to be 15.76 mW at a forward current of 20 mA, which improved by 19% compared to that of a conventional LED. These results show that a small amount of Al incorporation into a GaN layer improves the electrical and optical properties of the layer, which are attributed to the reduction of Ga vacancy and associated defects, such as dislocations.

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The Improvement of DC Performance in AlGaN–GaN HEFTs With Isoelectronic Al-Doped Channels

Cited by 14 publications

References 12 publications

Behavior of aluminum adsorption and incorporation at GaN(0001) surface: First-principles study

Behavior of aluminum adsorption and incorporation at GaN(0001) surface: First-principles study

Enhancement of two‐dimensional electron gases in AlGaN‐channel high‐electron‐mobility transistors with AlN barrier layers

Enhanced performance of GaN-based light emitting diode with isoelectronic Al doping layer

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