The In‐P‐O Phase Diagram: Construction and Applications

Schwartz, G. P.; Sunder, W. A.

doi:10.1149/1.2124151

Cited by 67 publications

(34 citation statements)

References 20 publications

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“…The determination of the atomic composition is over the XPS sampling depth of a few tens of angstroms, and useful information on the composition of the surface films can only be obtained within the framework of a structural model of the etched surfaces. Thermodynamically, In203 is slightly favored over In(OH)3, with free energies of formation of -833 and -762 k J/tool, respectively (25), although these bulk values may have to be modified slightly for surface species. Thus, XPS measurements include contributions from bulk InP, the surface oxide layer, and physisorbed contaminants, and the measured amounts of each of these species is modified by the depth distribution of the species.…”

Section: Discussionmentioning

confidence: 99%

A Comprehensive Investigation of HCl ‐ and Br2 / NH 3 ( aq ) ‐ Etched p ‐ InP Interfaces

Segar

Koval

Koel

et al. 1990

J. Electrochem. Soc.

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The physical and chemical composition of p-InP surfaces prepared with HC1 and Br2/NH3(aq) etches have been investigated using SEM and XPS, and the interfacial energetics have been studied using capacitance and open-circuit photovoltage measurements. The Br2/NH3(aq) etch produced a microscopically smooth surface with a surface layer containing less than a monolayer of impurities, composed primarily of InPO4 with some In(OH)3 and some adsorbed hydroxyl species. The HC1 etch produced a rough, crystalline surface with a one to two monolayer indium-rich surface layer which was heavily hydrated and contained In20~ or In(OH)3 and adsorbed hydroxyl species. The HC1 etch also resulted in greater surface hydrocarbon contamination than the Br2/NH3(aq) etch. Capacitance measurements of the p-InP/acetonitrile interface reveal that the interfacial energetics of Br2/NH3(aq) etched electrodes are controlled by filling of empty surface states by solution redox couples, while those of the HCl-etched electrodes are controlled by electrochemical growth of a surface film. The BrJNH3(aq) etch yields a p-InP surface which allows efficient electron transfer to the solution resulting in a deep depletion energetic condition under extreme reverse bias conditions, while HCl-etched electrodes enter an inversion region where excess electrons accumulate in the space charge region. Empty surface states in the bandgap of Br2/NH3(aq)etched electrodes were found to be evenly distributed at a density of ca. 1.7 • 1012 cm -2 V -1. The open-circuit photovoltages of Br2/NH3(aq)-etched electrodes approached the bulk recombination limited value of 800 mV for redox couples with E(0') near -1.0V, but for the most negative and the most positive redox couples, deviations in the ~xpected behavior were observed. These are explained by bandedge movement which alters the barrier height. These studies reveal that the behavior of p-InP photoelectrochemical cells is determined largely by the method of surface pretreatment and only in part by bulk properties of the semiconductor material. Even when the surface films are only a few monolayers thick, their effect on the surface energetics are dramatic.

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Section: Discussionmentioning

confidence: 99%

A Comprehensive Investigation of HCl ‐ and Br2 / NH 3 ( aq ) ‐ Etched p ‐ InP Interfaces

Segar

Koval

Koel

et al. 1990

J. Electrochem. Soc.

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“…It appears that the phase diagram for In-P-O is well verified 11 and therefore the diagram shown in Fig. 1 will be used in the construction of the In-Ga-P-O threedimensional diagram.…”

Section: Phase Diagramsmentioning

confidence: 91%

“…These are used to form two sides of the three sided pyramid. Schwartz et al 11,12 have previously investigated and constructed these two-dimensional phased diagrams using the Gibbs free energies listed in Table I and by performing controlled reaction experiments.…”

Section: Phase Diagramsmentioning

confidence: 99%

“…[2][3][4] As a result, there is a growing body of knowledge on the oxides of these materials. [5][6][7][8] The oxides of the binary compounds such as GaAs and InP have been thoroughly investigated, [9][10][11][12] but have not found application. On the other hand, little attention 1 has been given to the oxides of In 0.5 Ga 0.5 P and In 0.5 Al 0.5 P even though the latter contains a high concentration of aluminum.…”

Section: Introductionmentioning

confidence: 99%

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Thermal oxides of In0.5Ga0.5P and In0.5Al0.5P

Pulver¹,

Wilmsen²,

Niles³

et al. 2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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An investigation of the chemical composition of wet thermal oxides grown on In0.5Ga0.5P and In0.5Al0.5P is reported. The oxides were grown in the temperature range 500–650 °C. An estimate of the expected oxide composition was obtained by the construction of three-dimensional phase diagrams of the In–Ga–P–O and In–Al–P–O systems. These diagrams indicate that under thermodynamic equilibrium, the oxide layers should be composed primarily of mixtures of InPO4 and GaPO4 on In0.5Ga0.5P and InPO4 and AlPO4 on In0.5Al0.5P. X-ray photoemission spectroscopy (XPS) sputter profiles were used to determine the distribution of elements in the oxide layers and to identify the chemical compounds. The binding energy shifts observed in the XPS data suggests that the oxides are composed primarily of metal phosphates with low concentrations of the metal trioxides. At lower growth temperatures, the oxides composition is uniform with depth, but there is an increasing depletion of In near the substrate interface as the growth temperature increases.

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“…A compilation of the literature values of the vibrational modes for InP oxides and hydrides is listed in Table II. [33][34][35][36][37][38][39][40] and Table III. [41][42][43][44] The most intense peaks are marked with a star symbol.…”

Section: Methodsmentioning

confidence: 99%

Interfacial Chemistry of InP/GaAs Bonded Pairs

Liu

Kuech

2007

Journal of Elec Materi

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The interfacial chemistry of InP/GaAs direct bonding with either 5% HF in water or HF:ethanol (1:9) chemical pretreatments was investigated. Multiple internal transmission-Fourier transform infrared spectroscopy (MIT-FTIR) and atomic force microscopy (AFM) were used to probe the bonding interface. The bond strength was measured as a function of annealing conditions and prebonding chemical treatment. The HF-based pretreatments remove the initial native oxide, leaving an interfacial layer of either water or ethanol. The initial room-temperature bond strength is primarily determined by the strength of hydrogen bonding, which, in turn, is a function of the prebonding treatment. The removal of interfacial water and ethanol, and with the subsequent formation of the oxide layer, leads to an increased bond strength. For ethanol-based HF treatments, ethanol appears to react with the underlying interfacial oxide layer through a complex interaction with the absorbed water. After annealing, the bond strength for all prebonding preparations can reach a high value, comparable to the fracture strength of the InP. The oxide composition after thermal annealing shifts from In 2 O 3 to the eventual thermodynamic equilibrium product, InPO 4 .

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The In‐P‐O Phase Diagram: Construction and Applications

Cited by 67 publications

References 20 publications

A Comprehensive Investigation of HCl ‐ and Br2 / NH 3 ( aq ) ‐ Etched p ‐ InP Interfaces

A Comprehensive Investigation of HCl ‐ and Br2 / NH 3 ( aq ) ‐ Etched p ‐ InP Interfaces

Thermal oxides of In0.5Ga0.5P and In0.5Al0.5P

Interfacial Chemistry of InP/GaAs Bonded Pairs

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