The incorporation behavior of arsenic and antimony in GaAsSb/GaAs grown by solid source molecular beam epitaxy

Wu, Shuang; Guo, Liping; Wang, W.X.; Li, Z.H.; Shang, Xunzhong; Hu, Hao; Huang, Qi; Zhou, Jian

doi:10.1016/j.jcrysgro.2004.07.003

Cited by 16 publications

(5 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…By comparing the first layer of samples A and B, and C and F, it can be found that at a set growth temperature of 450 C and As/Ga ratio of 15, the Sb composition was doubled from 15% to 32% between samples A and B solely by doubling the Sb/Ga ratio from 1 to 2; however, the Sb composition only increased by 8% from 36% to 44% between samples C and F when doubling the Sb/Ga ratio from 3 to 6.16. This behavior was also reported by Wu et al, 25 where the Sb content at a fixed growth temperature was found to be sensitive to change in Sb flux during growth for low Sb flux, while being less sensitive at higher Sb fluxes. Third, the reduction of the As/Ga ratio at a fixed Sb/Ga ratio and growth temperature also results in an increase in Sb composition.…”

Section: A Strain Relaxation Properties Of Gaas 1-y Sb Y Metamorphicsupporting

confidence: 86%

Growth, strain relaxation properties and high-κ dielectric integration of mixed-anion GaAs1-ySby metamorphic materials

Zhu

Clavel

Goley

et al. 2014

Journal of Applied Physics

View full text Add to dashboard Cite

Mixed-anion, GaAs 1-y Sb y metamorphic materials with a wide range of antimony (Sb) compositions extending from 15% to 62%, were grown by solid source molecular beam epitaxy (MBE) on GaAs substrates. The impact of different growth parameters on the Sb composition in GaAs 1-y Sb y materials was systemically investigated. The Sb composition was well-controlled by carefully optimizing the As/Ga ratio, the Sb/Ga ratio, and the substrate temperature during the MBE growth process. High-resolution x-ray diffraction demonstrated a quasi-complete strain relaxation within each composition of GaAs 1-y Sb y . Atomic force microscopy exhibited smooth surface morphologies across the wide range of Sb compositions in the GaAs 1-y Sb y structures. Selected high-j dielectric materials, Al 2 O 3 , HfO 2 , and Ta 2 O 5 were deposited using atomic layer deposition on the GaAs 0.38 Sb 0.62 material, and their respective band alignment properties were investigated by x-ray photoelectron spectroscopy (XPS). Detailed XPS analysis revealed a valence band offset of >2 eV for all three dielectric materials on GaAs 0.38 Sb 0.62 , indicating the potential of utilizing these dielectrics on GaAs 0.38 Sb 0.62 for p-type metal-oxide-semiconductor (MOS) applications. Moreover, both Al 2 O 3 and HfO 2 showed a conduction band offset of >2 eV on GaAs 0.38 Sb 0.62 , suggesting these two dielectrics can also be used for n-type MOS applications. The well-controlled Sb composition in several GaAs 1-y Sb y material systems and the detailed band alignment analysis of multiple high-j dielectric materials on a fixed Sb composition, GaAs 0.38 Sb 0.62 , provides a pathway to utilize GaAs 1-y Sb y materials in future microelectronic and optoelectronic applications.

show abstract

Section: A Strain Relaxation Properties Of Gaas 1-y Sb Y Metamorphicsupporting

confidence: 86%

Growth, strain relaxation properties and high-κ dielectric integration of mixed-anion GaAs1-ySby metamorphic materials

Zhu

Clavel

Goley

et al. 2014

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…(15)-(16) Fig. 1 clearly shows that the Sb atom has a higher priority than As to incorporate into the growth surface at a relatively low flux ratio , (6) especially at a lower growth temperature, because of competition between As and Sb atoms for finite incorporation sites. (2) For a relatively high flux ratio , Sb incorporation exhibits saturation, which is attributable to competition between Sb atoms for the same incorporation sites.…”

Section: Resultsmentioning

confidence: 99%

The combination for thermodynamic model and precursor state used in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxy

Lin

Chou

Lin

2010

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)

View full text Add to dashboard Cite

The competition behavior between two Group V atoms is significant in the epitaxy growth of III-V-V compounds. We have developed a combination for the precursor state and the associated thermodynamic model in order to describe the competition behavior between Sb and As atoms during the pseudomorphic growth of GaAsSb/GaAs multiple quantum wells (MQWs) on GaAs (100) substrates by gas-source molecular-beam epitaxy (GSMBE). The strain-induced incorporation coefficient due to lattice mismatch between the growing film and substrate is also taken into account.

show abstract

“…[3]) and GaAsSb alloy (e.g., Ref. [4]) have also been extensively studied. On the other hand, the interface kinetics during the growth of a solid solution has not been fully understood and the theoretical study on the kinetics is still in progress.…”

Section: Introductionmentioning

confidence: 99%

Growth of a binary ideal solid solution crystal studied by Monte Carlo simulation

Matsumoto

Irisawa

Yokoyama

et al. 2008

Journal of Crystal Growth

View full text Add to dashboard Cite

The incorporation behavior of arsenic and antimony in GaAsSb/GaAs grown by solid source molecular beam epitaxy

Cited by 16 publications

References 19 publications

Growth, strain relaxation properties and high-κ dielectric integration of mixed-anion GaAs1-ySby metamorphic materials

Growth, strain relaxation properties and high-κ dielectric integration of mixed-anion GaAs1-ySby metamorphic materials

The combination for thermodynamic model and precursor state used in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxy

Growth of a binary ideal solid solution crystal studied by Monte Carlo simulation

Contact Info

Product

Resources

About