The influence of 175 MeV Ni13+ ion and Co-60 gamma irradiation effects on subthreshold characteristics of N-channel depletion MOSFETs

Pushpa, N.; Praveen, K. C.; Prakash, A. P. Gnana; Naik, P. S.; Gupta, Sachin; Revannasiddaiah, D.

doi:10.1063/1.4710363

Cited by 1 publication

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“…After annealing at 200C, the recovery in current is slightly more for 50 MeV Li 3+ ion irradiated transistor when compared to 175 MeV Ni 13+ ion irradiated transistor. The high energy ion irradiation creates defects and their complexes in addition to the trapped charges, these defects and their complexes are not completely annealed at 200°C for 100hrs [14]. The variation of 1/h FE(Φ) -/h FE(0) with total dose after different ion irradiations [31].…”

Section: Irradiation Facilitiesmentioning

confidence: 99%

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Application of Pelletron Accelerator to Study High Total Dose Radiation Effects on Semiconductor Devices

Prakash

Pushpa²

2015

SSP

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Silicon bipolar junction transistors (BJTs), Silicon-germanium heterojunction bipolar transistors (SiGe HBTs) and metal oxide semiconductor (MOS) devices are the key components of BiCMOS integrated circuits. The semiconductor devices need to withstand very high total doses (100’s of Mrad) for reliable operation of electronic circuits for 8-10 years of LHC operation. The study of radiation tolerance of semiconductor devices up to 100 Mrad of total dose takes longer time with conventional 60Co gamma, proton and electron irradiation facilities and the effects due to these radiations are well understood. Hence it is important to study the effects of heavy ion irradiation on various semiconductor devices. The irradiation time decreases with increasing linear energy transfer (LET) of incident radiation and LET increases with atomic number of the impinging ions. But it is essential to understand the mechanism of energy transfer by different heavy ions in semiconductor devices. Therefore, here we give an overview of different heavy ion interactions with Si BJTs, MOSFETs and SiGe HBTs by primarily focusing on the electrical characteristics of these devices before and after ion irradiation. We show that the irradiation time needed to reach very high total dose can be reduced by using Pelletron accelerator facilities instead of conventional irradiation facilities.

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Section: Irradiation Facilitiesmentioning

confidence: 99%

“…The linear energy transfer (LET) and range of different high energy ions in the transistor structure[14].…”

mentioning

confidence: 99%

Application of Pelletron Accelerator to Study High Total Dose Radiation Effects on Semiconductor Devices

Prakash

Pushpa²

2015

SSP

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show abstract

The influence of 175 MeV Ni13+ ion and Co-60 gamma irradiation effects on subthreshold characteristics of N-channel depletion MOSFETs

Cited by 1 publication

References 0 publications

Application of Pelletron Accelerator to Study High Total Dose Radiation Effects on Semiconductor Devices

Application of Pelletron Accelerator to Study High Total Dose Radiation Effects on Semiconductor Devices

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