The influence of a concave corner on the characteristics of deep-sub-micrometre grooved-gate PMOSFETs

Abstract

To improve the performance and reliability of grooved gate MOSFETs, the effects of a concave corner on the characteristics of deep sub-micrometre grooved-gate PMOSFETs are studied using the device simulator MEDICI. The results of our study indicate that the concave corner of a recessed gate influences device characteristics strongly. With an increase of the concave corner, the threshold voltage increases, the current driving capability is improved and the hot-carrier effect is decreased.