The influence of amorphous TaNx under-layer on the crystal growth of over-deposited Ta film

Interface and layer periodicity effects on the thermal conductivity of copper-based nanomultilayers with tungsten, tantalum, and tantalum nitride diffusion barriers

“…For example, XRD measurements of the annealed films demonstrate the formation of α-Ta by 600 • C in the Cu/Ta multilayers (Figure 4c), and TaN 0.5 in the Cu/Ta at 700 • C (Figure 4d). The film resistivity can, in some cases, be reduced by an order of magnitude or more, such as in the case of β -Ta to α-Ta as discussed by Wang et al 67 and Grosser et al 68 and investigated through first-principles calculations by Lanzillo et al 10 . As the electronic contribution to thermal conductivity is inversely proportional to the thermal conductivity through the Wiedemann-Franz law, a corresponding increase in thermal conductivity would be expected with the onset of these lower resitivity phases.…”

Analysis of the composition of tantalum nitride in CMOS metallization trenches using parallel angle‐resolved XPS

“…Several publications describe a change from high resistive tetragonal β-Ta to low resistive body-centered cubic α-Ta with increasing nitrogen content in the TaN interlayer. [5][6][7] For future technology nodes, it is therefore important to develop analysis methods that can be used to quantify current and future materials in small structures. In this paper, we show that parallel angle-resolved X-ray photoelectron spectroscopy (pAR-XPS) as a non-…”

“…Furthermore, it influences the crystallinity of the Ta layer deposited on top of it. Several publications describe a change from high resistive tetragonal β ‐Ta to low resistive body‐centered cubic α ‐Ta with increasing nitrogen content in the TaN interlayer 5–7 …”