2017
DOI: 10.1142/s2010135x17500217
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The influence of Bi content on dielectric properties of Bi4–xTi3O12–1.5x ceramics

Abstract: A kind of lead-free dielectric materials, such as the bismuth layered perovskite-type structure of Bi 4Àx Ti 3 O 12À1:5x ðx ¼ 0:04; 0:02; 0; À0:02; À0:04Þ, was prepared by the conventional solid-state method at 800 C and sintered at 1100 C. The variation of structure and electrical properties with different Bi concentration was studied. All the Bi 4Àx Ti 3 O 12À1:5x ðx ¼ 0:04; 0:02; 0; À0:02; À0:04Þ samples exhibited a single structured phase. SEM could be a better approach to present the microstructure of Bi … Show more

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“…At higher frequencies (close to 1 MHz, focused in Figure 12-A), electronic, ionic and even orientation polarization contribute to the dielectric constant 36 . For this condition, ε' seems to be close to 115 (25ºC, 1 MHz), which agrees with previous reports from literature 59 . Since the temperature does not significantly affect the ionic and electronic polarization 36 , ε' does not considerably increase with temperature at high values of frequency.…”
Section: Resultssupporting
confidence: 92%
“…At higher frequencies (close to 1 MHz, focused in Figure 12-A), electronic, ionic and even orientation polarization contribute to the dielectric constant 36 . For this condition, ε' seems to be close to 115 (25ºC, 1 MHz), which agrees with previous reports from literature 59 . Since the temperature does not significantly affect the ionic and electronic polarization 36 , ε' does not considerably increase with temperature at high values of frequency.…”
Section: Resultssupporting
confidence: 92%