The influence of bulk traps on the charge-transfer inefficiency of bulk charge-coupled devices

Collet, M.G.

doi:10.1109/t-ed.1976.18378

Cited by 11 publications

(2 citation statements)

References 2 publications

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“…46, and the vital role of temperature ͑both as a diagnostic aid and in determining the optimal operating conditions͒ regarding bulk traps was discussed in Ref. 47. The specific case of CTE at low signal levels was discussed in Ref.…”

Section: Charge Transfer Efficiencymentioning

confidence: 99%

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Charge-coupled devices as particle tracking detectors

Damerell

1998

Review of Scientific Instruments

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Following a few years after the invention of the charge-coupled device ͑CCD͒ in 1970, the discovery of charmed particles established the need for very high precision ͑few m͒ detectors for tracking high energy charged particles. This review describes the work which has evolved over the past 20 years from these disconnected events, both as regards the application of increasingly refined CCDs to particle tracking ͑in particular as vertex detectors for identifying heavy flavor quarks and tau leptons͒, and also the advances in CCD detector design stimulated by these requirements. The lessons learned in this work should provide guidance for the construction of large arrays of CCDs or active pixel devices in the future in a number of areas of science and technology.

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Section: Charge Transfer Efficiencymentioning

confidence: 99%

“…This situation has been considered by various authors. 43,47,50 Let us first take a qualitative look at the situation. As the charge packet is transported from gate to gate ͑within a pixel or between neighboring pixels͒, vacant traps that lie within the storage volume of the charge packet will tend to capture electrons.…”

Section: Bulk Damagementioning

confidence: 99%

Charge-coupled devices as particle tracking detectors

Damerell

1998

Review of Scientific Instruments

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Low‐temperature characteristics of buried channel charge‐coupled devices

Kimata

Denda

Yutani

et al. 1986

Electron Comm Jpn Pt II

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This paper aims at the improvement of the characteristics of the buried‐channel charge‐coupled device (BCCD), which is used in such low‐temperature operation as the infrared image sensor. The measurement and analysis are performed for the transfer loss of BCCD below 100°K. The transfer loss in this temperature region is dominated by the carrier freeze‐out to the impurity level composing the n‐well of the buried‐channel. The loss in this temperature region depends on the period and the fall‐time of the driving clock. The dependence of the loss on the driving condition can be accounted for by the model in which two time‐constants exist for the emission from the trap. The reason for the different emission time‐constants from a trap depending on time is that the fringing field in the channel depends on time. When a large fringing field exists, the effective barrier of the trap is lowered by the Poole‐Frenkel effect, thereby decreasing the emission time‐constant. To reduce the transfer loss in this temperature region, there are several methods, such as utilization of impurity with shallow donor level in the n‐well of the buried‐channel, reduction of the impurity concentration, and increase of the fringing field.

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Improvement of dark signal and near IR response of imaging CCD under vacuum surface operation

Hava

1989

Solid-State Electronics

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The influence of bulk traps on the charge-transfer inefficiency of bulk charge-coupled devices

Cited by 11 publications

References 2 publications

Charge-coupled devices as particle tracking detectors

Charge-coupled devices as particle tracking detectors

Low‐temperature characteristics of buried channel charge‐coupled devices

Improvement of dark signal and near IR response of imaging CCD under vacuum surface operation

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