2006
DOI: 10.1142/s0217984906012031
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THE INFLUENCE OF CARBON AND BORON ATOMS ON THE OPTICAL AND ELECTRICAL PROPERTIES OF THIN FILM a-Si:H

Abstract: A series of undoped and p-doped a-SiC:H samples have been made in the framework of a research plan for obtaining high quality p-type window layers by "Plasma Enhanced Chemical Vapor Deposition (PECVD)" technique from the mixtures of silane ( SiH 4), methane ( CH 4) and diborane ( B 2 H 6) gases. For the optimization of the window layer, the dependence of the electrical (conductivity) and optical (band gap) properties due to altered ratios of methane and diborane gases were investigated. When the diborane gas r… Show more

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