The influence of coalescence time on unintentional doping in GaN/sapphire

The Spatial Distribution of Threading Dislocations in Gallium Nitride Films

“…Similar films were used as initial templates for Samples F-J. Samples B-E were grown to thicknesses of 6 to 8.5 mm using an initial islanded growth stage of increasing duration, followed by island coalescence (this approach is termed 3D-2D growth), giving TD densities of (7. , respectively (details in [32] ). Samples F and G were grown using a single SiN x interlayer with short (0.5 mm) and long (2.5 mm) coalescence times, giving TD densities of 2.1 Â 10 9 cm À2 and 4.6 Â 10 8 cm À2 , respectively.…”

Scanning capacitance microscopy studies of GaN grown by epitaxial layer overgrowth

“…Using this curve, doping concentrations for uid regions were then calculated. This method has previously been shown to provide dopant concentrations for uid regions similar to those found by SIMS in subsequent experiments [3]. Figure 2 shows a (0002) WBDF TEM image of an ELOG GaN sample.…”

“…GaN is then grown up through the gaps in the mask and overgrows the masked region forming wings of material with a low dislocation density. In previous studies, we have used scanning capacitance microscopy (SCM) to show that other dislocation density reduction routes may lead to the introduction of unintentionally-doped (uid) layers in the structure [3]. Here, we assess the impact of ELOG on the location and dopant concentration of uid regions.…”

A brief review of co-doping

“…Much research has concentrated on the effects of unintentional oxygen doping into semiconductors [172,[228][229][230][231][232], especially GaN [229,231,232] and AlGaN [172,230]. Similar co-doping effects were demonstrated.…”