The influence of concentration of hydroxyl radical on the chemical mechanical polishing of SiC wafer based on the Fenton reaction

Lu, Jiabin; Chen, Run; Liang, Huazhuo; Yan, Qiusheng

doi:10.1016/j.precisioneng.2017.12.011

Cited by 65 publications

(24 citation statements)

References 19 publications

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“…pH directly and indirectly affects the oxidation of organic matter [28]. According to previous studies, the best pH for Fenton is, which was applied in this study [29]. This seems to be due to the high persistence of hydrogen peroxide and iron sulfate at pH = 3.…”

Section: Effect Of Cpxmentioning

confidence: 94%

Photocatalytic degradation of cephalexin by UV activated persulfate and Fenton in synthetic wastewater: optimization, kinetic study, reaction pathway and intermediate products

Almasi

Esmaeilpoor

Hoseini

et al. 2020

J Environ Health Sci Engineer

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We used Low pressure mercury vapor lamp activated of Sodium Persulfate (UV/SPS) and Fenton processes in two separate reactors to comparison of cephalexin (CPX) degradation in aqueous solution. The effect of pH, initial concentration of SPS, concentration of CPX, concentration of H 2 O 2 and concentration of Fe 2+ on the degradation of CPX were investigated. The residue of CPX and metabolites were determined by HPLC and GC/MS. The Total Organic Carbon (TOC) analysis was utilized for surveying the mineralization of CPX. Biodegradability of CPX in both advanced oxidation processes was evaluated by BOD5/COD in optimum condition. The results indicated that the maximum CPX removal was obtained at pH 3, H 2 O 2 3 mM, concentration of initial CPX 10 mg/L and by increasing the doses of SPS from 0.1 to 0.2 mM, the degradation of CPX was enhanced. In this study, the most important factors for AOP efficiency was concentration of initial CPX; and then pH in UV/SPS and H 2 O 2 in Fenton processes. The TOC measurements indicate that the UV/SPS and Fenton can efficiently mineralize CPX. CPX removed enough to achieve suitable biodegradability for a further biological process. Too, analysis of generated intermediates during the degradation of CPX was conducted by GC/MS method and a degradation pathway was proposed.

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Section: Effect Of Cpxmentioning

confidence: 94%

Photocatalytic degradation of cephalexin by UV activated persulfate and Fenton in synthetic wastewater: optimization, kinetic study, reaction pathway and intermediate products

Almasi

Esmaeilpoor

Hoseini

et al. 2020

J Environ Health Sci Engineer

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“…Then, the metal cation and H 2 O 2 undergo the Fenton reaction to generate a strong oxidizer ÁOH (Bokare and Choi, 2014;Sruthi et al, 2018), as shown in equations (3) to (5). Subsequently, ÁOH reacts with SiC to form a softer and easily removable SiO 2 oxide layer (Lu et al, 2018), as shown in equation ( 6); Second, the magnetic particles form a chain string structure that constrains and clamps the abrasives to form a viscoelastic polishing pad on the surface of the polishing disk based on the MR effect of MRCFF under the influence of the magnetic field. Subsequently, the generated SiO 2 oxide layer is stripped and removed via mechanical action and with the polishing solution.…”

Section: Mrcf Principle and Devicementioning

confidence: 99%

“…In addition, the newly exposed surface is oxidized and removed, and the cycle is repeated; thus, sub-nanometer ultra-precision polishing of the substrate surface can be finally achieved (Liang et al, 2018b). Lu et al (2018) and Xu et al (2017) studied the effects of liquid-phase and solid-phase Fe-based solid catalysts on ÁOH generation through the Fenton reaction and the effect of the Fenton reaction on CMP for SiC. The results showed that the Fenton reaction is particularly violent with liquid-phase catalysts.…”

Section: Introductionmentioning

confidence: 99%

Preparation and polishing properties of water-based magnetorheological chemical finishing fluid with high catalytic activity for single-crystal SiC

Deng

Yan

et al. 2020

Journal of Intelligent Material Systems and Structures

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A water-based high catalytic activity magnetorheological chemical finishing fluid (HCAMRCFF) was prepared and modified to enhance the chemical action strength in magnetorheological chemical finishing (MRCF) for single-crystal SiC. The fluid consisted of ferroferric oxide (Fe3O4) and chromium (Cr), deionized water (DW), polyethylene glycol (PEG) and oleic acid, and hydrogen peroxide (H2O2) as the composite catalyst particles, base carrier liquid, surfactants, and oxidant, respectively. HCAMRCFFs with different component concentrations were used to modify via evaluating their catalytic activity. Moreover, the MRCF experiments on SiC were conducted using the prepared HCAMRCFFs. The results show that the catalytic activity increases with an increase in the oxidant concentration. Furthermore, composite catalysts and composite surfactants can significantly improve their catalytic activity. The catalytic activity also increases with an increase in the concentration of composite catalysts. In the composite catalysts, increasing the Cr concentration can significantly enhance the catalytic performance. Composite surfactants can exert the relative superiority to enhance the catalytic activity. Compared with the unmodified finishing fluid, the catalytic activity of modified HCAMRCFF increases by 65.4%; the material removal rate (MRR) of SiC increases by 72.5% up to 635.621 nmh−1, and a surface with a roughness of 0.33 nm is obtained.

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“…Zhao et al (2017) soaked r-plane sapphire wafers in a new chelating agent for one week and increased the MRR to 2.48 mm/h. Lu et al (2018) conducted CMP of SiC wafers and found that larger per cent OH could react with the wafer surface and generated a relatively soft SiO 2 layer, leading to improved surface finish and faster chemical reaction rates. Chen et al (2016) investigated the material removal process in CMP.…”

Section: Chemical Mechanical Polishing For Semiconductor Devicesmentioning

confidence: 99%

Recent advances and applications of abrasive processes for microelectronics fabrications

Zhong

2019

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Purpose This paper aims to review recent advances and applications of abrasive processes for microelectronics fabrications. Design/methodology/approach More than 80 patents and journal and conference articles published recently are reviewed. The topics covered are chemical mechanical polishing (CMP) for semiconductor devices, key/additional process conditions for CMP, and polishing and grinding for microelectronics fabrications and fan-out wafer level packages (FOWLPs). Findings Many reviewed articles reported advanced CMP for semiconductor device fabrications and innovative research studies on CMP slurry and abrasives. The surface finish, sub-surface damage and the strength of wafers are important issues. The defects on wafer surfaces induced by grinding/polishing would affect the stability of diced ultra-thin chips. Fracture strengths of wafers are dependent on the damage structure induced during dicing or grinding. Different thinning processes can reduce or enhance the fracture strength of wafers. In the FOWLP technology, grinding or CMP is conducted at several key steps. Challenges come from back-grinding and the wafer warpage. As the Si chips of the over-molded FOWLPs are very thin, wafer grinding becomes critical. The strength of the FOWLPs is significantly affected by grinding. Originality/value This paper attempts to provide an introduction to recent developments and the trends in abrasive processes for microelectronics manufacturing. With the references provided, readers may explore more deeply by reading the original articles. Original suggestions for future research work are also provided.

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The influence of concentration of hydroxyl radical on the chemical mechanical polishing of SiC wafer based on the Fenton reaction

Cited by 65 publications

References 19 publications

Photocatalytic degradation of cephalexin by UV activated persulfate and Fenton in synthetic wastewater: optimization, kinetic study, reaction pathway and intermediate products

Photocatalytic degradation of cephalexin by UV activated persulfate and Fenton in synthetic wastewater: optimization, kinetic study, reaction pathway and intermediate products

Preparation and polishing properties of water-based magnetorheological chemical finishing fluid with high catalytic activity for single-crystal SiC

Recent advances and applications of abrasive processes for microelectronics fabrications

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