The influence of contact material and its fabrication on X-ray HR-GaAs:Cr sensor noise characteristics

Chsherbakov, I.; Chsherbakov, P.; Колесникова, Ирина; Lozinskaya, A.; Mihaylov, T.; Новиков, В. А.; Толбанов, О. П.; Tyazhev, A.; Zarubin, A.

doi:10.1088/1748-0221/14/01/c01026

Cited by 2 publications

(3 citation statements)

References 10 publications

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“…This fact correlates with the small pixel effect theory. The overall energy resolution dependence on the temperature is consistent with the increase in sensor leakage current at higher temperatures, which increases the noise contribution to the spectroscopic performance [7]. The best energy resolution value can be obtained by either decreasing the pixel size and therefore employing the small pixel effect, or by lowering the temperature.…”

Section: Jinst 16 P02026supporting

confidence: 66%

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Influence of temperature on the energy resolution of sensors based on HR GaAs:Cr

Lozinskaya¹,

Veale²,

Колесникова³

et al. 2021

J. Inst.

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HR GaAs:Cr is a well known material, used for room-temperature X-ray detector applications. While GaAs:Cr detectors have typically shown good performance at 25̂C, there may be benefits of running the detector at lower temperatures where leakage currents are lower. The aim of this study was to evaluate the energy resolution across the temperature range −10̂C to 30̂C which is easily achievable using compact electrical cooling solutions. Using HR GaAs:Cr detectors that were flip-chip-bonded to STFC's PIXIE ASIC, it was possible to measure the spectroscopic performance of the material as a function of temperature. Both HR GaAs:Cr sensors were of 500 μm thickness and mobility-lifetime products measured at room temperature comprised 0.5⋅10−4 and 1.7⋅10−4 cm2V−1 for sensors dated from 2016 and 2018, respectively. Using an 241Am sealed source, pulse height spectra were measured for pixel arrays with pitches of 250 and 500 μm for temperatures in the range -10̂C to 30̂C. By varying the operating voltage of the detectors it was also possible to study the variation in the charge transport properties of the HR GaAs:Cr over the same temperature range.

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Section: Jinst 16 P02026supporting

confidence: 66%

“…Most of these prior investigations have been conducted at room temperature or quite close to it. In this temperature range HR GaAs:Cr sensors are suitable for X-ray detection, and have good spatial and energy resolution [7,8].…”

Section: Introductionmentioning

confidence: 99%

Influence of temperature on the energy resolution of sensors based on HR GaAs:Cr

Lozinskaya¹,

Veale²,

Колесникова³

et al. 2021

J. Inst.

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“…The mobility µ n = 4100 cm 2 Vs was calculated by linear fitting of the V n (E) dependence. The electron lifetime τ n [14] was estimated by approximating the field dependence of the charge collection efficiency (CCE) (figure 6 that the minimal of output pulse duration is ≈ 2.5 ns for HR-GaAs:Cr sensors with a thickness of 500 µm and an active area size of 0.09 cm 2 (figure 8). The experimental (figure 7, b) and calculated data correlate with each other in the range of the electric field equaled to 2 ÷ 4 kV cm .…”

Section: Impulse Response Calculationmentioning

confidence: 99%

Response of HR-GaAs:Cr sensors to subnanosecond X- and β-ray pulses

Chsherbakov¹,

Chsherbakov²,

Lozinskaya³

et al. 2019

J. Inst.

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A: Currently, semiconductors with high atomic number Z arouse strong interest in construction of X-ray sensors. One of the most prospective materials are presented by elements from the group A III B V . Gallium arsenide compensated with chromium (HR-GaAs:Cr) is one of these materials and exhibits unique characteristics. The sensors based on HR-GaAs:Cr demonstrate high absorption efficiency. The response of HR-GaAs:Cr sensors to subnanosecond X-and β-ray pulses of 28 ÷ 52 keV from an accelerator of runaway electrons are described in this research. The samples have symmetric metal-semiconductor-metal structure. The active area of the samples was 0.09 cm 2 and the thickness of sensitive layer was 145 ÷ 500 µm. Experimental characteristics of pulses were compared with theoretical estimations. An optimal thickness of sensitive layer of HR-GaAs:Cr sensors was determined, which allowed us to obtain the minimal possible value of output pulse duration ≈ 1 ns.

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The influence of contact material and its fabrication on X-ray HR-GaAs:Cr sensor noise characteristics

Cited by 2 publications

References 10 publications

Influence of temperature on the energy resolution of sensors based on HR GaAs:Cr

Influence of temperature on the energy resolution of sensors based on HR GaAs:Cr

Response of HR-GaAs:Cr sensors to subnanosecond X- and β-ray pulses

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