The Influence of Cross-Magnetron Effect on the Properties of Indium Tin Oxide Thin Films Deposited by Pulsed Dual Magnetron Discharges

Abstract

Magnetron‐sputtered oxide films are widely used for industrial applications. Especially the coating of large substrate areas implies the requirement for reliable and lateral homogeneous film properties. However, the inhomogeneous distribution of the sputter rate as well as cross‐corner and cross‐magnetron effects may reduce the functional film performance. Therefore, we have investigated the electrical, optical and structural film properties of indium tin oxide (ITO) films in relation to the physical process properties. The films were deposited using a reactive AC dual magnetron discharge and In:Sn targets. For investigation of the influence of the plasma property distribution on film properties static deposition experiments were performed. Substrate temperature measurements have confirmed the inhomogeneous distribution of the plasma properties, resulting from the cross‐magnetron effect.

Flexible OLED fabrication with ITO thin film on polymer substrate

“…[19][20][21] In positive sense some groups have also reported characterization of the ITO films deposited on flexible substrates by magnetron sputtering. 22,23) Magnetron sputtering offers a flexible deposition method of thin films with high throughput. This process can be used for high-purity film fabrication in semiconductors and large-area coatings.…”

Influence of Different Pulse Modes on the Plasma Properties in a Dual Magnetron Discharge used for the Deposition of Indium Tin Oxide Films from a Metallic Target

“…This effect which is similar to the CCE for a single magnetron was predicted for a dual magnetron and named ‘cross‐magnetron effect’ (CME) by Lopp et al12 They simulated the target erosion of such a system and have found an increased erosion rate at two diagonally opposite corners of the dual magnetron caused by an enhanced ionisation probability of the process gas at these positions. Moreover, we could also show in ITO film deposition experiments that the enhanced charge carrier density at the substrate region changes the process parameters in such a manner that the transparency of the ITO films is improved 8…”

“…Including the lateral variation of the film properties and the thermal flux measurements,8 the obtained results of the charge carrier density can be extrapolated to the lower part of the discharge. Here the highest value is expected at the inner position (530 mm) in front of target 2 with an approximately 2.5 times lower value in front of target 1.…”

“…Moreover, the influence of the different pulse modes on the p–F curve of the transition mode was investigated and will be discussed in connection with the obtained plasma properties. These measurements are related to the paper of Kleinhempel et al8 who investigated the influence of the CCE/CME on the lateral distribution of film properties in more detail.…”

“…In our opinion, the very nature of the CCE/CME is the inhomogeneity of the plasma density due to the reduced magnetic field in the curve region as described above. This may cause not only an inhomogeneity in target erosion but also in the ion bombardment of the growing film, thus influencing not only the deposition rate but also film structure and properties 2,8. Moreover, properties like the dissociation degree of molecular gases will also be influenced.…”