The influence of crystallite and interface region properties on the CdSe layer photoconductivity

Vaitkus, J.; Jasinskaite, R.; Kazlauskienė, V.; Miškinis, J.; Sinius, J.; Zindulis, A.

doi:10.1016/s0040-6090(01)00794-5

Cited by 6 publications

(5 citation statements)

References 2 publications

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“…The mechanism of photoconductivity is most likely similar to that observed in polycrystalline and quantum dot CdSe. [37][38][39][40][41][42][43] This mechanism consists of direct band-gap excitation, with deep trap states and surface states determining the upper bound of the photoexcitation gain. It is likely that the grain boundaries between nanoparticles in the CdSe segments contribute substantially to this trapping.…”

Section: Resultsmentioning

confidence: 99%

Template Growth of Photoconductive Metal−CdSe−Metal Nanowires

et al. 2002

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Metal-CdSe-metal (metal ) Au, Ni) nanowires were grown by electrochemical replication of porous aluminum oxide and polycarbonate track etch membranes with pore diameters of 350 and 70 nm, respectively. The lengths of the individual segments of the nanowires were controlled by varying the amount of charge that was passed. The composition of the CdSe segments was characterized by energy-dispersive X-ray spectroscopy. A 1:1 ratio could be obtained, and Cd-and Se-rich stoichiometries were also made by adjusting the concentrations of Cd 2+ and SeO 2 in the aqueous plating solutions. X-ray powder diffraction showed the presence of both zinc blende and wurzite phases, and grain sizes on the order of 10 nm were observed by TEM. The nanowires were resistive in the dark but showed pronounced visible light photoconductivity.

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Section: Resultsmentioning

confidence: 99%

Template Growth of Photoconductive Metal−CdSe−Metal Nanowires

et al. 2002

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“…The 2000 printed letters/s was achieved in this early time [6]. The levels responsible for the Fermi level was understood by surface properties analyze [7].…”

Section: Photodetectorsmentioning

confidence: 99%

Defect and Structure Engineering – Submicron Technology and Inverse Nanotechnology for Photo- and Ionizing Radiation Detectors

Vaitkus

2011

AMR

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A review is given of what kind technological aspects were used for realizing the defect engineering in semiconductor layers or crystals. The possibilities to change the free carrier capture are presented. The effect of Fermi level pinning at the surface levels allow to avoid the influence of barriers on the photoconductivity as well as to increase a role of recombination in the inter-crystalline region. The isovalent doping or the creation of the clusters allows transforming the defect distribution in the crystal bulk. The detector structure using the high electric field can introduce the recombination in at the contacts therefore allow diminishing a role of carrier capture in the bulk of structure. The cluster generation allows to increase the capture rate in the definite volume by a proton irradiation. The experience of different technologies for Si, GaAs, PbS, CdSe are presented.

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“…The mechanism was proved to be a role of band-gap excitation in the photoconduction. 95,96 specifically, the number of free carriers increase owing to white light irradiation, which are quenched rapidly in the dark through recombination and transport under the applied bias. Similar photoeffects were observed with Ni-CdSe-Ni nanowires and with 70 nm diameter wires of both compositions.…”

Section: Light-controlled Propertiesmentioning

confidence: 99%

One-dimensional hybrid nanostructures with light-controlled properties

Liu

2009

Dalton Trans.

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One-dimensional organic-inorganic nanostructure has gained extensive attention among photo and photoelectronic applications. Organic and inorganic (metal or semiconductor) nanowires that could, through bottom-up fabrication, as well as template directed synthesis, enable diverse applications in nanoscale electronics and photoelectronics. In comparison, semiconductor organic-inorganic hybrid nanowires have initiated a growing aspect due to their improved photoelectronic and photovoltaic devices as well as light-controlled properties. The motivation of this perspective is to describe the fundamental principles and photonic applications on hybrid nanowires, in which synthesis and light-controlled properties of hybrid organic-inorganic semiconductor nanowires was highlighted.

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The influence of crystallite and interface region properties on the CdSe layer photoconductivity

Cited by 6 publications

References 2 publications

Template Growth of Photoconductive Metal−CdSe−Metal Nanowires

Template Growth of Photoconductive Metal−CdSe−Metal Nanowires

Defect and Structure Engineering – Submicron Technology and Inverse Nanotechnology for Photo- and Ionizing Radiation Detectors

One-dimensional hybrid nanostructures with light-controlled properties

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