The influence of crystallization route on the properties of lanthanum-doped Bi4Ti3O12 thin films prepared from polymeric precursors

Simões, Alexandre Zirpoli; Riccardi, C. S.; Quinelato, C.; Ries, Andreas; Longo, Elson; Varela, José Arana

doi:10.1016/j.mseb.2004.08.004

Cited by 7 publications

(1 citation statement)

References 26 publications

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“…5, the voltage changed from Ϫ30 to +30 V and the leakage current density were below 1.4 ϫ 10 −10 A / cm 2 for all three samples in which different Nd content doped. The insulating properties are better than that of Bi 3.15 Nd 0.85 Ti 3 O 12 thin film and other rare-earth elements doped BIT thin films, [29][30][31] which is possibly caused by the discontinuous nanotubes or the bad contact between nanotubes and electrodes. One can also see that the leakage current density has a little decrease with the increasing content of Nd in the compound.…”

Section: Resultsmentioning

confidence: 99%

Raman scattering, electronic, and ferroelectric properties of Nd modified Bi4Ti3O12 nanotube arrays

Zhou

et al. 2010

Journal of Applied Physics

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Neodymium-modified bismuth titanate, Bi 4−x Nd x Ti 3 O 12 ͑BNdT͒, nanotube arrays were fabricated by sol-gel method utilizing experimentally prepared porous anodic aluminum oxide ͑AAO͒ templates with pore diameters of about 200 nm and 100 nm, respectively. The as-prepared nanotube arrays exhibit orthorhombic perovskite polycrystalline structure of BNdT, which have outer diameters of about 200 and 100 nm, corresponding to the pores diameters of the AAO templates employed, and with wall thicknesses of about 9.7 nm and 12 nm, respectively. The phonon vibration modes corresponding to the Bi atoms in the Bi 2 O 2 layers weaken and broaden with increasing Nd content. The changes of Raman internal modes originated from the vibrations of atoms inside the TiO 6 octahedral indicate the increase in octahedron tilting and structural distortion. The leakage current and polarization-electric field response curves of BNdT nanotube arrays were measured, and the hysteresis loop illustrates a good ferroelectric property of as-prepared BNdT nanotube array at room temperature. The dielectric constant and dissipation factor were measured in the frequency region from 1 kHz to 1 MHz indicating polarization relaxation phenomenon.

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Section: Resultsmentioning

confidence: 99%

Raman scattering, electronic, and ferroelectric properties of Nd modified Bi4Ti3O12 nanotube arrays

Zhou

et al. 2010

Journal of Applied Physics

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The effect of microwave annealing on the electrical characteristics of lanthanum doped bismuth titanate films obtained by the polymeric precursor method

Simões

Ramírez

Stojanovic

et al. 2006

Applied Surface Science

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Effect of thickness and crystalline morphology on electrical properties of rf-magnetron sputtering deposited Bi4Ti3O12 thin films

Cheng

et al. 2018

Ceramics International

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The influence of crystallization route on the properties of lanthanum-doped Bi4Ti3O12 thin films prepared from polymeric precursors

Cited by 7 publications

References 26 publications

Raman scattering, electronic, and ferroelectric properties of Nd modified Bi4Ti3O12 nanotube arrays

Raman scattering, electronic, and ferroelectric properties of Nd modified Bi4Ti3O12 nanotube arrays

The effect of microwave annealing on the electrical characteristics of lanthanum doped bismuth titanate films obtained by the polymeric precursor method

Effect of thickness and crystalline morphology on electrical properties of rf-magnetron sputtering deposited Bi4Ti3O12 thin films

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