The influence of Cu doping on opto-electronic properties of chemically deposited CdS

Petre, D.; Pentia, E.; Pintilie, I.; Boţilă, T.

doi:10.1016/s0921-5107(98)00435-8

Cited by 56 publications

(21 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In both CdS films, identical bandgap value of 2.43 eV was determined suggesting that addition of ammonium sulphate complexing agent in chemical bath does not affect the optical band gap. The determined bandgap value is comparable with previously reported values (2.46 eV) [18,19].…”

Section: Optical Characterizationsupporting

confidence: 91%

Effect of ammonium sulphate on chemical bath deposition of CdS thin films

2004

View full text Add to dashboard Cite

Section: Optical Characterizationsupporting

confidence: 91%

Effect of ammonium sulphate on chemical bath deposition of CdS thin films

2004

View full text Add to dashboard Cite

“…A summary of the dark resistivity of some CBD-CdS films reported in the literature and the corresponding Cd source used. CBD-CdS using Cu [14,15], Li [16,17], Na [18], Al [19,20] and B [11,21] has been reported. Ag doping of CBD-CdS was carried out using the ion exchange process [22,23] and In-doped CdS films were grown by co-evaporation of CdS and indium [24,25].…”

Section: Introductionmentioning

confidence: 99%

Investigation of aluminium and indiumin situdoping of chemical bath deposited CdS thin films

Khallaf

Chai

Lupan

et al. 2008

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Aluminum and indium in situ doping of CdS using chemical bath deposition (CBD) is investigated. The effects of Al and In-doping on optical properties as well as on electrical properties, crystal structure, chemistry and morphology of CdS films are studied. Al doping of CdS using CBD is shown to be successful where a resistivity as low as 4.6 × 10 −2 cm and a carrier density as high as 1.1 × 10 19 cm −3 were achieved. The bandgap of Al-doped films decreases to a minimum of 2.26 eV, then slightly increases and finally saturates at 2.30 eV as the [Al]/[Cd] ratio in solution increases from 0.018 to 0.18. X-ray diffraction studies showed Al 3+ ions entering the lattice substitutionally at low concentration and interstitially at high concentration. Phase transition, due to annealing, and induced lattice damage, due to doping, were detected by micro-Raman spectroscopy. Film stoichiometry was found to be sensitive to Al concentration, while film morphology was unaffected by Al doping. Indium doping using CBD, however, was found to be highly unlikely due to the low solubility of indium sulfide. Instead, the formation of InS/In 2 S 3 dominated the deposition process over CdS.

show abstract

“…The Cu doped CdS thin films have many applications, such as high efficiency photovoltaic cells and light emitters [23,24]. Moreover, the doping of copper changes the band gap energy of CdS and also improves its photoelectric properties [25]. Recently, a few reports have been published on the properties of Cu doped CdS layers, for example the study of Cu doped CdS homojunction and its rectifying properties [26].…”

Section: Cadmium Sulphide (Cds) Is a Compound Semiconductor Of Directmentioning

confidence: 99%

A DFT study of the effects of Sc doping on electronic and optical properties of CdS nanoparticles

Réhman

Majid

Hassan

et al. 2015

Materials Science-Poland

View full text Add to dashboard Cite

In the present work a systematic study was carried out to understand the influence of Sc doping on electronic and optical properties of CdS nanoparticles. The geometry optimization and symmetry computation for CdS and Sc doped CdS nanoparticles using Density Functional Theory (DFT) on B3LYP level with the QZ4P for Cd and DZ2P for sulphur and Sc were performed by Amsterdam Density Functional (ADF). The results show that HOMO-LUMO gap as well as electronic and optical properties of CdS clusters vary with Sc doping. The HOMO-LUMO gap is affected by the dopant and its value decreases to 0.6 eV. Through considering the numerical integration scheme in the ADF package, we investigated different vibrational modes and our calculated Raman and IR spectra are consistent with the reported result. The calculated IR and Raman peaks of CdS and Sc doped CdS clusters were in the range of 100 to 289 cm −1 , 60 cm −1 to 350 cm −1 and 99 cm −1 to 282 cm −1 , 60 cm −1 to 350 cm −1 , respectively, which was also confirmed by experiment as well as a blue shift occurrence. Subsequently, for deeper research of pure and doped CdS clusters, their absorption spectra were calculated using time-dependent DFT method.

show abstract

The influence of Cu doping on opto-electronic properties of chemically deposited CdS

Cited by 56 publications

References 16 publications

Effect of ammonium sulphate on chemical bath deposition of CdS thin films

Effect of ammonium sulphate on chemical bath deposition of CdS thin films

Investigation of aluminium and indiumin situdoping of chemical bath deposited CdS thin films

A DFT study of the effects of Sc doping on electronic and optical properties of CdS nanoparticles

Contact Info

Product

Resources

About