The influence of defects on short circuit current density in p-i-n silicon solar cell

Mohamad, Wagah F.; Mustafa, Alhan M.

doi:10.1016/j.renene.2004.03.012

Cited by 4 publications

(3 citation statements)

References 8 publications

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“…This value is unacceptably high for most solar cells because high-density defects severely reduce the carrier collection efficiency. 28 This value indicates that PSCs have very high tolerance to defects.…”

Section: Broader Contextmentioning

confidence: 99%

Anomalously large interface charge in polarity-switchable photovoltaic devices: an indication of mobile ions in organic–inorganic halide perovskites

Zhao

Liang

Zhang

et al. 2015

Energy Environ. Sci.

212

204

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Section: Broader Contextmentioning

confidence: 99%

Anomalously large interface charge in polarity-switchable photovoltaic devices: an indication of mobile ions in organic–inorganic halide perovskites

Zhao

Liang

Zhang

et al. 2015

Energy Environ. Sci.

212

204

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show abstract

“…Evidently the introduction of oxide layer increases the total absorption depth. This in turn utilizes the wasted portion of the solar spectrum, consequently increases the short circuit current [15,16].…”

Section: Laboratory Preparationmentioning

confidence: 99%

The Effects of Fabrication Prameters and Electroforming Phenomenon on CdTe/Si (p) Heterojunction Photovoltaic Solar Cell

Mohammad¹

2012

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The In-doped CdTe/Si (p) heterostruture was fabricated and its electrical and photoelectrical properties were studied and interpreted. During the fabrication processes of CdTe/Si heterojunction, some practical troubles were encountered. However, the important one was the formation of the SiO<sub>2</sub> thin oxide layer on the soft surface of the Si during the formation of the back contact. The silicon wafer was subjected to different chemical treatments in order to remove the thin oxide layer from the silicon wafer surfaces. It was found that the heterojunction with Si (p<sup>+</sup>) substrate gave relatively high open circuit voltage comparing with that of Si (p) substrate. Also an electroforming phenomenon had been observed in this structure for the first time which may be considered as a memory effect. It was observed that there are two states of conduction, non-conducting state and conducting state. The normal case is the non-conducting state. As the forward applied voltage increased beyond threshold value, it switches into the conducting state and remains in this state even after the voltage drops to zero

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“…2 order to determine optimal thickness of i-layer of a cell, the admittance analysis method had been used to calculate the collection efficiency and the J sc in a-Si:H p-i-n solar cell as a function of the thickness of i-layer. 3 In other words, achieving higher efficiency should not be the only objective, but also it requires assessment of economic aspects for a device fabrication.…”

mentioning

confidence: 99%

Optimization of absorber layers' thickness in a Si micromorph solar cell for current matching with intermediate ZnO reflector

Bohra

Panchal

2013

Journal of Renewable and Sustainable Energy

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In a micromorph silicon (Si) solar cell, the optimum performance is decided by the top hydrogenated amorphous Si (a-Si:H) and the bottom microcrystalline Si (lc-Si) absorber layer thicknesses. This paper investigates the performance of the micromorph cell using modeling and simulation studies in MATLAB. The short circuit current density (J sc ), open circuit voltage (V oc ), fill factor, and efficiency (g) of the cells are analysed by varying thicknesses of the top a-Si:H and the bottom lc-Si absorber layers with and wihtout ZnO Intermidiate Reflector (ZIR). ZIR improves current density of top a-Si:H i-layer and hence thickness reduction of top subcell i-layer. Due to this, the light induced degradation can be minimised. For each top a-Si:H layer thickness, the bottom lc-Si layer thickness is varied in steps. The micromorph structure is numerically solved using Newton-Raphson technique and current density-voltage characteristics for top a-Si:H, bottom lc-Si:H sub-cells, and composite cell are obtained. One of the combinations with the top a-Si:H layer with thickness of 300 nm and the bottom lc-Si layer with thickness of 3.25 lm gives the best efficiency of 13.12% with ZIR. The simulation study performed here can be extended to design third generation multijunction Si quantum dots solar cells.

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The influence of defects on short circuit current density in p-i-n silicon solar cell

Cited by 4 publications

References 8 publications

Anomalously large interface charge in polarity-switchable photovoltaic devices: an indication of mobile ions in organic–inorganic halide perovskites

Anomalously large interface charge in polarity-switchable photovoltaic devices: an indication of mobile ions in organic–inorganic halide perovskites

The Effects of Fabrication Prameters and Electroforming Phenomenon on CdTe/Si (p) Heterojunction Photovoltaic Solar Cell

Optimization of absorber layers' thickness in a Si micromorph solar cell for current matching with intermediate ZnO reflector

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