The influence of deposition temperature on growth mode, optical and mechanical properties of ZnO films prepared by the ALD method

Yuan, N.Y.; Wang, S.Y.; Tan, C.B.; Wang, X.Q.; Chen, G.G.; Ding, J.N.

doi:10.1016/j.jcrysgro.2012.12.024

Cited by 57 publications

(44 citation statements)

References 29 publications

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“…For the H 2 O‐ZnO thin films (Figure A), a strong ZnO (002) peak intensity was detected at a growth temperature of 100°C. However, the intensity of the ZnO (002) peaks greatly decreased in the temperature range from 125 and 200°C, which corresponds to the XRD results of ALD‐ZnO films using DEZ and H 2 O reported by T. Tynell et al and NY Yuan et al This trend can be explained in terms of the surface energy at a given temperature. At a low temperature of 100°C, the preferred <002> ZnO orientation was the most thermodynamically favorable growth direction due to the low surface energy of the (002) plane.…”

Section: Resultssupporting

confidence: 86%

Comparative study of the electrical characteristics of ALD‐ZnO thin films using H₂O and H₂O₂ as the oxidants

et al. 2019

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ZnO thin films were deposited via atomic layer deposition (ALD) using H2O and H2O2 as oxidants with substrate temperatures from 100°C to 200°C. The ZnO films deposited using H2O2 (H2O2‐ZnO) showed lower growth rates than those deposited with H2O (H2O‐ZnO) at these temperature range due to the lower vapor pressure of H2O2, which produces fewer OH− functional groups; the H2O2‐ZnO films exhibited higher electrical resistivities than the H2O‐ZnO films. The selection of H2O2 or H2O as oxidants was revealed to be very important for controlling the electrical properties of ALD‐ZnO thin films, as it affected the film crystallinity and number of defects. Compared to H2O‐ZnO, H2O2‐ZnO exhibited poor crystallinity within a growth temperature range of 100‐200°C, while H2O2‐ZnO showed a strong (002) peak intensity. Photoluminescence showed that H2O2‐ZnO had more interstitial oxygen and fewer oxygen vacancies than H2O‐ZnO. Finally, both kinds of ZnO thin films were prepared as transparent resistive oxide layers for CIGS solar cells and were evaluated.

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Section: Resultssupporting

confidence: 86%

Comparative study of the electrical characteristics of ALD‐ZnO thin films using H₂O and H₂O₂ as the oxidants

et al. 2019

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“…The GPC values larger than a monolayer were attributed to the possible presence of roughness. In other publications on thermal ALD, a transition from (002) to (100) preferential orientation with temperature was reported, often accompanied with a drop in (002) peak intensity at the edges of the ALD window. Within the ALD window, both (100) and (002) orientations were apparent with no strong preferential orientation and a GPC of around 2 Å.…”

Section: Resultsmentioning

confidence: 81%

ZnO Thin Films Grown by Plasma‐Enhanced Atomic Layer Deposition: Material Properties Within and Outside the “Atomic Layer Deposition Window”

Pilz

Perrotta

Leising

et al. 2019

Physica Status Solidi (a)

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ZnO thin films and nanostructures are applied in various devices due to their interesting optical and electrical properties. Atomic layer deposition (ALD) of ZnO offers unique advantages such as precise thickness control, uniformity, and conformality. Using reactive plasma species as the co-reactant (PE-ALD) allows further enhancement of the material characteristics and tunable properties. The substrate temperature has been reported to be the most influential parameter in this technique, as it affects the growth per cycle (GPC) and material properties. However, an investigation on how the film properties are linked to the GPC is lacking in the literature. Herein, the temperature dependence of several material properties is found closely related to the GPC. The preferential crystal orientation switches from (100) to (002) up to the constant region of the GPC versus temperature, the so-called ALD window. Refractive index and mass density show different slopes in temperature regions outside and within the ALD window. Excitonic absorption is only found for films prepared within the ALD window, and the resistivity drops rapidly above the ALD window. Following these results, more insights can be gained on the ALD growth (especially the role of the ALD window) and ideal temperature ranges for specific applications.

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“…In contrast, ZnO is known to form crystalline grains already at low temperatures. 24,25 Taken together, the data suggest a ZnO island growth mechanism combined with a layer-by-layer SnO x growth. After repeated supercycles this leads to a film of ZnO nanoparticles in a SnO x matrix, which is further in line with recent observations by TEM for a related system.…”

Section: -mentioning

confidence: 72%

Growth, intermixing, and surface phase formation for zinc tin oxide nanolaminates produced by atomic layer deposition

Hägglund

Grehl²,

Tanskanen

et al. 2016

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. A broad and expanding range of materials can be produced by atomic layer deposition at relatively low temperatures, including both oxides and metals. For many applications of interest, however, it is desirable to grow more tailored and complex materials such as semiconductors with a certain doping, mixed oxides, and metallic alloys. How well such mixed materials can be accomplished with atomic layer deposition requires knowledge of the conditions under which the resulting films will be mixed, solid solutions, or laminated. The growth and lamination of zinc oxide and tin oxide is studied here by means of the extremely surface sensitive technique of low energy ion scattering, combined with bulk composition and thickness determination, and x-ray diffraction. At the low temperatures used for deposition (150 C), there is little evidence for atomic scale mixing even with the smallest possible bilayer period, and instead a morphology with small ZnO inclusions in a SnO x matrix is deduced. Postannealing of such laminates above 400 C however produces a stable surface phase with a 30% increased density. From the surface stoichiometry, this is likely the inverted spinel of zinc stannate, Zn 2 SnO 4 . Annealing to 800 C results in films containing crystalline Zn 2 SnO 4 , or multilayered films of crystalline ZnO, Zn 2 SnO 4 , and SnO 2 phases, depending on the bilayer period.

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The influence of deposition temperature on growth mode, optical and mechanical properties of ZnO films prepared by the ALD method

Cited by 57 publications

References 29 publications

Comparative study of the electrical characteristics of ALD‐ZnO thin films using H₂O and H₂O₂ as the oxidants

Comparative study of the electrical characteristics of ALD‐ZnO thin films using H₂O and H₂O₂ as the oxidants

ZnO Thin Films Grown by Plasma‐Enhanced Atomic Layer Deposition: Material Properties Within and Outside the “Atomic Layer Deposition Window”

Growth, intermixing, and surface phase formation for zinc tin oxide nanolaminates produced by atomic layer deposition

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The influence of deposition temperature on growth mode, optical and mechanical properties of ZnO films prepared by the ALD method

Cited by 57 publications

References 29 publications

Comparative study of the electrical characteristics of ALD‐ZnO thin films using H2O and H2O2 as the oxidants

Comparative study of the electrical characteristics of ALD‐ZnO thin films using H2O and H2O2 as the oxidants

ZnO Thin Films Grown by Plasma‐Enhanced Atomic Layer Deposition: Material Properties Within and Outside the “Atomic Layer Deposition Window”

Growth, intermixing, and surface phase formation for zinc tin oxide nanolaminates produced by atomic layer deposition

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Comparative study of the electrical characteristics of ALD‐ZnO thin films using H₂O and H₂O₂ as the oxidants

Comparative study of the electrical characteristics of ALD‐ZnO thin films using H₂O and H₂O₂ as the oxidants