The Influence of Different Partial Pressure on the Fabrication of InGaO Ultraviolet Photodetectors

Abstract

A metal–semiconductor–metal ultraviolet photodetector has been fabricated with a radiofrequency (RF)-sputtered InGaO thin film. Results for the devices fabricated under different oxygen partial pressure are here in discussed. Under low oxygen partial pressure, the devices work in the photoconductive mode because of the large number of subgap states. Therefore, the devices exhibit internal gain. These defects in the films result in slow switching times and lower photo/dark current ratios. A higher flow ratio of oxygen during the sputtering process can effectively restrain the oxygen vacancies in the film. The responsivity of the photodetector fabricated under an oxygen flow ratio of 20% can reach 0.31 A/W. The rise time and decay time can reach 21 s and 27 s, respectively.

Fast Response Solar-Blind Photodetector with a Quasi-Zener Tunneling Effect Based on Amorphous In-Doped Ga2O3 Thin Films

“…As shown in the inset of Figure 5b, Eg can be extracted from a linear extrapolation of (αhv) 2 ; the photon energy at the point where (αhv) 2 = 0 is Eg. The obtained Eg is ~4.2eV; it decreases compared to ~4.9eV of Ga2O3, which is consistent with references [23][24][25]. Above the a-IGO thin film, we fabricated Au finger electrodes by lithography to be a photodetector.…”

InGaO3 Nanowire Networks for Deep Ultraviolet Photodetectors

“…At the same time, after the complete reaction, the pressure instability caused by the gas supply imbalance in the reaction cavity will lead to secondary nucleation of the NWs and then precipitate along other directions, producing some “sharp thorns”. In the appropriate growth time, the precursor supply is stable, and the barometric stability is high, so secondary nucleation can be avoided, which is why the growth time of NWs should not be too long. , Moreover, the SEM images of the InGaO 3 NW networks grown under different pressures at 700 °C are shown in Figure S2. Normally, NWs grow under relatively high pressures, , but the synthesis of the NW network reported here can also be achieved and maintained stable at high vacuum levels.…”

Postannealed (GaIn)2O3 Films Deposited by Sputtering for Ultraviolet Photodetection

“…The length and width of the Ti/Au fingers are 3 and 0.2 mm, respectively. The effective area of the photodetector is around 0.072 cm 2 .The photograph of the photodetector is shown in Figure 1. The current voltage curve (I−V) of the fabricated photodetectors is measured by a Keithley-2400 instrument.…”

“…The wide wavelength range of UV detection is very attractive for practical use like environmental monitoring, optical communications, and radiation detection. (GaIn) 2 O 3 film-based UV photodetectors have been reported recently. − Chang et al have realized amorphous (GaIn) 2 O 3 film-based UV photodetectors by cosputtering . (In 0.26 Ga 0.74 ) 2 O 3 -based UV detectors grown by microwave irradiation-assisted deposition have been demonstrated by Muazzam et al Chen et al have fabricated amorphous (GaIn) 2 O 3 photodetectors using the cosputtering system and varied the oxygen flow rate during the growth process .…”