2005
DOI: 10.1016/j.tsf.2005.03.038
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The influence of filament material on radical production in hot wire chemical vapor deposition of a-Si:H

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Cited by 34 publications
(42 citation statements)
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“…This idea is supported by the result that the [H]/[O] density ratio is around 2 at high catalyst temperatures. A similar complete decomposition mechanism has been proposed for SiH 4 when the W catalyst temperature is higher than 2000 K [23,24]. In this case, SiH 2 and SiH 3 densities decreased with the increase in the catalysis temperature [23].…”
Section: Discussionsupporting
confidence: 72%
“…This idea is supported by the result that the [H]/[O] density ratio is around 2 at high catalyst temperatures. A similar complete decomposition mechanism has been proposed for SiH 4 when the W catalyst temperature is higher than 2000 K [23,24]. In this case, SiH 2 and SiH 3 densities decreased with the increase in the catalysis temperature [23].…”
Section: Discussionsupporting
confidence: 72%
“…For Cat-CVD of Si films, Ta catalyst has a relatively longer lifetime than W for the slower growth rate of tantalum silicide than tungsten silicide [10,27,28]. And TaC is more stable than Ta in terms of physical properties such as melting point and hardness, which is different from tungsten carbides (WC and W 2 C) with the lower melting points than W. Consequently, we were motivated to prepare Si films using the TaC coated Ta catalyst.…”
Section: Introductionmentioning
confidence: 99%
“…However, by estimating the catalytic activity drop caused by the decrease in temperature from 1900 ºC to 1750 ºC, it is found a maximum reduction of only 20 %. This result was obtained using 60 kJ/moles for the activation energy of the silane decomposition [18]. This means that the chemical change from W to W 5 Si 3 is also relevant for understanding the observed drop of the catalytic activity.…”
Section: Resultsmentioning
confidence: 71%