The Influence of Growth Parameters of Strain InGaAs Quantum Wells on Luminescent Properties

Gu, Ling; Meng, Juan

doi:10.1007/s11664-021-09394-6

Cited by 4 publications

(1 citation statement)

References 17 publications

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“…MBs are layers in which the composition of the alloy is gradually changed, serving as a bridge between the substrate and the subsequent layers, and hence allowing to tailor the in-plane lattice parameter of the subsequent layers. This effectively reduces the defect density, such as misfit (MD) and threading dislocations (TD) that arise at the buffer/substrate interface and is known to greatly affect the bandgap [ 10 , 11 ], optical [ 12 ] and electronic [ 13 , 14 ] properties of the laser.…”

Section: Introductionmentioning

confidence: 99%

Dislocation and strain mapping in metamorphic parabolic-graded InGaAs buffers on GaAs

et al. 2023

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We investigate different architectures for parabolic-graded InGaAs metamorphic buffers grown on GaAs using transmission electron microscopy techniques. The different architectures include InGaP and AlInGaAs/InGaP superlattices with different GaAs substrate misorientations and the inclusion of a strain balancing layer. Our results correlate: (i) the density and distribution of dislocations in the metamorphic buffer and (ii) the strain in the next layer preceding the metamorphic buffer, which varies for each type of architecture. Our findings indicate that the dislocation density in the lower region of the metamorphic layer ranges between 108 and 1010 cm−2, with AlInGaAs/InGaP superlattice samples exhibiting higher values compared to samples with InGaP films. We have identified two waves of dislocations, with threading dislocations typically located lower in the metamorphic buffer (~ 200–300 nm) in comparison to misfit dislocations. The measured localised strain values are in good agreement with theoretical predications. Overall, our results provide a systematic insight into the strain relaxation across different architectures, highlighting the various approaches that can be used to tailor strain in the active region of a metamorphic laser. Graphical abstract

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