2023
DOI: 10.3389/fmats.2023.1192989
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The influence of helium-induced defects on the migration of strontium implanted into SiC above critical amorphization temperature

T. F. Mokgadi,
Z. A. Y. Abdalla,
M. Madhuku
et al.

Abstract: The presence of radiation-induced defects and the high temperature of implantation are breeding grounds for helium (He) to accumulate and form He-induced defects (bubbles, blisters, craters, and cavities) in silicon carbide (SiC). In this work, the influence of He-induced defects on the migration of strontium (Sr) implanted into SiC was investigated. Sr-ions of 360 keV were implanted into polycrystalline SiC to a fluence of 2 × 1016 Sr-ions/cm2 at 600°C (Sr-SiC). Some of the Sr-SiC samples were then co-implant… Show more

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