2003
DOI: 10.1109/jqe.2003.813191
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The influence of lateral carrier diffusion and surface recombination on the behavior of semiconductor optical amplifier (SOA)-based MMIs

Abstract: Abstract-The influence of lateral carrier diffusion and surface recombination on the self-imaging properties of semiconductoroptical-amplifier-based multimode interference couplers has been verified by simulations using a beam propagation method. It shows a significant degradation of the self-imaging properties of these devices. Buried heterostructures or deeply etched waveguide structures can decrease the impact when the degree of surface recombination is sufficiently low.Index Terms-Diffusion, multimode inte… Show more

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Cited by 2 publications
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“…When the pulsed current is increased, the lateral distribution of the carrier density might disturb the stepindex profile, which in turn affect the real and imaginary parts of the refractive index and, thus, affect the modal gain inside the MMI region. 14) Therefore, current modulation and the resultant perturbations of the lateral step-index profile might degrade the self-imaging properties of the MMI-LD and cause jitter. The threshold carrier density of an MMI-LD is approximately 10 18 cm À3 .…”
mentioning
confidence: 99%
“…When the pulsed current is increased, the lateral distribution of the carrier density might disturb the stepindex profile, which in turn affect the real and imaginary parts of the refractive index and, thus, affect the modal gain inside the MMI region. 14) Therefore, current modulation and the resultant perturbations of the lateral step-index profile might degrade the self-imaging properties of the MMI-LD and cause jitter. The threshold carrier density of an MMI-LD is approximately 10 18 cm À3 .…”
mentioning
confidence: 99%