The influence of lysine on InP(001) surface ordering and nanowire growth

Abstract

We report on high resolution photoelectron core level spectroscopy (HRCLS) and scanning tunnelling microscopy (STM) measurements of the decomposition of lysine adsorbed on InP(001) substrates. We find that components from the lysine can be present on the InP surface even after annealing to 600 • C and desorption of the native surface oxide. We further observe that while a crystalline surface phase can be observed on the epi-ready surface after annealing, the lysine treated surface still appears rough. We conclude that lysine residues inhibit the formation of a flat crystalline structure on the InP(001) surface. These results are discussed in terms of the lysine promotion of [001] nanowire growth.

Surface structure and morphology of InAs(111)B with/without gold nanoparticles annealed under arsenic or atomic hydrogen flux

“…A second important factor is the initial condition of the substrate at the nucleation point of the wires, which can have very important implications for the subsequent growth [37,41]. In this respect it is interesting to note that the presence of gold particles can lower the oxide desorption temperature, possibly extending the window for growth beyond that of normal bulk growth.…”

A comparative study of the effect of gold seed particle preparation method on nanowire growth

“…Another factor that should be considered is the PLL layer required for the direct deposition method. Not only does the PLL layer add to the amount of organic residues, but perhaps more importantly it changes the surface properties of the substrate significantly [16]. However, the amount of PLL remains the same for deposition of both 30 and 80 nm sized colloids and could therefore not explain the prolonged incubation time for the 80 nm DDC particles.…”

Tuning growth direction of catalyst-free InAs(Sb) nanowires with indium droplets

“…Another approach to obtain defect-free nanowires would include a change of polarity [18] or growth direction [19], since the typical stacking defects observed in III-V nanowires are related to the formation of {111}B planes [20]. In the case of InP nanowires, different crystalline growth directions have been achieved by engineering the gold catalyst [21][22][23][24][25], or by spontaneous kinking in the case of selfcatalyzed nanowires [26]. The resulting wires in 〈100〉 directions are defect-free [23].…”